onsemi SI4435DY

Mosfet P-ch 30V 8.8A 8-SOIC / Trans Mosfet P-ch 30V 8.8A 8-PIN SOIC T/r
Production

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Weight130 mg
Technical
Continuous Drain Current (ID)-8.8 A
Current Rating-8.8 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance15 mΩ
Drain to Source Voltage (Vdss)-30 V
Dual Supply Voltage-30 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.604 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Operating Temperature-55 °C
Nominal Vgs-1.7 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation2.5 W
Rds On Max20 mΩ
Resistance20 MΩ
Rise Time13.5 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage-1.7 V
Turn-Off Delay Time42 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)-30 V
Dimensions
Height1.57 mm
Length4.9 mm
Width3.9 mm

Documents

Download datasheets and manufacturer documentation for onsemi SI4435DY.

Newark
Datasheet5 pages22 years ago
Datasheet8 pages2 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Farnell
Datasheet7 pages6 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
onsemi
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
element14 APAC
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Upverter
Technical Drawing1 page4 years ago
Fairchild Semiconductor
Technical Drawing1 page9 years ago
Technical Drawing1 page10 years ago
iiiC
Datasheet8 pages24 years ago
TME
Datasheet0 pages0 years ago

Inventory History

3 month trend:
+25.65%

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for onsemi SI4435DY.

Related Parts

Descriptions

Descriptions of onsemi SI4435DY provided by its distributors.

MOSFET P-CH 30V 8.8A 8-SOIC / Trans MOSFET P-CH 30V 8.8A 8-Pin SOIC T/R
P-Channel 30 V 20 mOhm 17 nC Surface Mount PowerTrench Mosfet - SOIC-8
30V P-Channel PowerTrench® MOSFET -8.8A, 20mΩ
MOSFET, P CHANNEL0, -30V, -8.8A, SOIC; Transistor Polarity: P Channel; Continuous Drain Current Id: -8.8A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.015ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V - 25V).

Manufacturer Aliases

onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON SEMICONDUCTOR CORP
  • ON Semiconductor Corporation
  • ON4
  • onsemi / Fairchild
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON SEMICONDUTOR
  • ON Semiconductor Inc.
  • onsemiconductor

Part Number Aliases

This part may be known by these alternate part numbers:

  • SI4435DY.
  • SI4435DY..

Technical Specifications

Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Weight130 mg
Technical
Continuous Drain Current (ID)-8.8 A
Current Rating-8.8 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance15 mΩ
Drain to Source Voltage (Vdss)-30 V
Dual Supply Voltage-30 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.604 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Operating Temperature-55 °C
Nominal Vgs-1.7 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation2.5 W
Rds On Max20 mΩ
Resistance20 MΩ
Rise Time13.5 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage-1.7 V
Turn-Off Delay Time42 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)-30 V
Dimensions
Height1.57 mm
Length4.9 mm
Width3.9 mm

Documents

Download datasheets and manufacturer documentation for onsemi SI4435DY.

Newark
Datasheet5 pages22 years ago
Datasheet8 pages2 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Farnell
Datasheet7 pages6 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
onsemi
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
element14 APAC
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Upverter
Technical Drawing1 page4 years ago
Fairchild Semiconductor
Technical Drawing1 page9 years ago
Technical Drawing1 page10 years ago
iiiC
Datasheet8 pages24 years ago
TME
Datasheet0 pages0 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement3 pages3 years ago
Reach Statement3 pages10 years ago
Materials Sheet3 pages10 years ago
Reach Statement3 pages9 years ago
Materials Sheet3 pages9 years ago
Reach Statement8 pages9 years ago
Reach Statement2 pages11 years ago
Rohs Statement1 page11 years ago
Rohs Statement1 page10 years ago