Vishay SI2399DS-T1-GE3

Transistor: P-MOSFET; unipolar; -20V; -6A; 0.034ohm; 2.5W; -55+150 deg.C; SMD; SOT23
Datasheet

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)-6 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance28 mΩ
Drain to Source Voltage (Vdss)-20 V
Fall Time9 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance835 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Operating Temperature-55 °C
Nominal Vgs-600 mV
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation1.25 W
Rds On Max34 mΩ
Rise Time20 ns
Schedule B8541290080
Threshold Voltage-600 mV
Turn-Off Delay Time28 ns
Turn-On Delay Time22 ns
Dimensions
Height1.12 mm

Documents

Download datasheets and manufacturer documentation for Vishay SI2399DS-T1-GE3.

Future Electronics
Datasheet10 pages12 years ago
Farnell
Datasheet10 pages8 years ago
Newark
Datasheet10 pages8 years ago
Datasheet9 pages3 years ago
Datasheet10 pages8 years ago
Arrow Electronics
Datasheet10 pages11 years ago

Inventory History

3 month trend:
+18.38%

Engineering Resources

View Evaluation kits and Reference designs for Vishay SI2399DS-T1-GE3.

Related Parts

Descriptions

Descriptions of Vishay SI2399DS-T1-GE3 provided by its distributors.

Transistor: P-MOSFET; unipolar; -20V; -6A; 0.034ohm; 2.5W; -55+150 deg.C; SMD; SOT23
MOSFET, P CH, W/D, 20V, 6A, SOT23; Transistor Polarity:P Channel; Continuous Dra
Small Signal Field-Effect Transistor, 6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, P CH, W/D, 20V, 6A, SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:-6A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.028ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:2.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-236; No. of Pins:3; MSL:-; Operating Temperature Range:-55°C to +150°C

Manufacturer Aliases

Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
  • VISHA
  • Vishay Thin Film
  • Vishay Intertechnology
  • Vishay Semiconductors
  • VISAHY
  • VISHY
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • VISHAY FOIL RESISTORS
  • Vishay Semiconductor Opto Division
  • VISH/IR
  • VSHY
  • VSH
  • Vishay Intertech
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VSHAY
  • VISHAY ELECTRONIC
  • Vishay General Semiconductor - Diodes Division
  • Vishay Intertechnologies
  • VISHAY AMERICAS INC
  • Vishay Semiconductor Diodes Division
  • VISHAY PRECISION GROUP
  • VISHAY AMERICAS
  • Vishay Intertechnology Inc.

Technical Specifications

Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)-6 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance28 mΩ
Drain to Source Voltage (Vdss)-20 V
Fall Time9 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance835 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Operating Temperature-55 °C
Nominal Vgs-600 mV
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation1.25 W
Rds On Max34 mΩ
Rise Time20 ns
Schedule B8541290080
Threshold Voltage-600 mV
Turn-Off Delay Time28 ns
Turn-On Delay Time22 ns
Dimensions
Height1.12 mm

Documents

Download datasheets and manufacturer documentation for Vishay SI2399DS-T1-GE3.

Future Electronics
Datasheet10 pages12 years ago
Farnell
Datasheet10 pages8 years ago
Newark
Datasheet10 pages8 years ago
Datasheet9 pages3 years ago
Datasheet10 pages8 years ago
Arrow Electronics
Datasheet10 pages11 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement5 pages12 years ago