Vishay SI2374DS-T1-GE3
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 78-SI2374DS-T1-GE3 | 137,815 | 1 | Tape & Reel | 17h | ||||||||
| SI2374DS-T1-GE3 | 270 | 81 | 1d | |||||||||
| SI2374DS-T1-GE3 | 270 | 1 | Cut Tape | 17h | ||||||||
| SI2374DS-T1-GE3 | 2,720 | 3 | 5d | |||||||||
| 7052386 | 24,000 | 3K | Tape & Reel | 17h |
Technical Specifications
Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)4.5 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance25 mΩ
Drain to Source Voltage (Vdss)20 V
Fall Time9 ns
Gate to Source Voltage (Vgs)8 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.7 W
Min Operating Temperature-55 °C
Number of Channels1
Power Dissipation960 mW
Rise Time22 ns
Schedule B8541210080
Threshold Voltage1 V
Turn-Off Delay Time16 ns
Turn-On Delay Time4 ns
Dimensions
Height1.12 mm
Inventory History
3 month trend: -1.73%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Vishay SI2374DS-T1-GE3.
Related Parts
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Single N-Channel 20 V 45 mOhm 7 nC 0.8 W Silicon Surface Mount Mosfet - SOT-23
Diodes Inc.DMG2302U-7
N-Channel 20 V 90 mOhm Surface Mount Enhancement Mode Mosfet -SOT-23-3
VishaySI2312CDS-T1-GE3
Transistor: N-MOSFET; unipolar; 20V; 6A; 0.0318ohm; 2.1W; -55+150 deg.C; SMD; SOT23
Descriptions
Descriptions of Vishay SI2374DS-T1-GE3 provided by its distributors.
Si2374DS Series 20 V 0.030 Ohm SMT N-Channel MOSFET - SOT-23 (TO-236)
MOSFET, N-CH, 20V, 5.9A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:5.9A; Source Voltage Vds:20V; On Resistance
N-CHANNEL 20 V (D-S) MOSFET Small Signal Field-Effect Transistor, 5.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, N-CH, 20V, 5.9A, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.9A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.025ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 1.7W; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)
Manufacturer Aliases
Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- VISHA
- Vishay Thin Film
- Vishay Intertechnology
- Vishay Semiconductors
- VISAHY
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- VISHAY FOIL RESISTORS
- Vishay Semiconductor Opto Division
- VISH/IR
- VSHY
- VSH
- Vishay Intertech
- VISHAY INTERTECHNOLOGY ASIA PT
- VSHAY
- VISHAY ELECTRONIC
- Vishay General Semiconductor - Diodes Division
- Vishay Intertechnologies
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY PRECISION GROUP
- VISHAY AMERICAS
- Vishay Intertechnology Inc.
Inventory History
3 month trend: -1.73%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)4.5 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance25 mΩ
Drain to Source Voltage (Vdss)20 V
Fall Time9 ns
Gate to Source Voltage (Vgs)8 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.7 W
Min Operating Temperature-55 °C
Number of Channels1
Power Dissipation960 mW
Rise Time22 ns
Schedule B8541210080
Threshold Voltage1 V
Turn-Off Delay Time16 ns
Turn-On Delay Time4 ns
Dimensions
Height1.12 mm
Compliance
Environmental Classification
Lead FreeLead Free
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements