Vishay SI2366DS-T1-GE3

SI2366DS-T1-GE3 N-channel MOSFET Transistor; 5.8 A; 30 V; 3-Pin SOT-23
Datasheet

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Technical Specifications

Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Weight1.437803 g
Technical
Continuous Drain Current (ID)5.8 A
Drain to Source Resistance30 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance335 pF
Max Operating Temperature150 °C
Max Power Dissipation2.1 W
Min Operating Temperature-55 °C
Nominal Vgs1.2 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation1.25 W
Rds On Max36 mΩ
Rise Time12 ns
Schedule B8541290080
Threshold Voltage1.2 V
Turn-Off Delay Time14 ns
Turn-On Delay Time5 ns

Documents

Download datasheets and manufacturer documentation for Vishay SI2366DS-T1-GE3.

Newark
Datasheet10 pages12 years ago
Datasheet10 pages9 years ago
Farnell
Datasheet10 pages8 years ago
RS (Formerly Allied Electronics)
Datasheet10 pages8 years ago

Inventory History

3 month trend:
-1.41%

Engineering Resources

View Evaluation kits and Reference designs for Vishay SI2366DS-T1-GE3.

Related Parts

Descriptions

Descriptions of Vishay SI2366DS-T1-GE3 provided by its distributors.

SI2366DS-T1-GE3 N-channel MOSFET Transistor; 5.8 A; 30 V; 3-Pin SOT-23
Trans MOSFET N-CH 30V 4.5A 3-Pin SOT-23 T/R
MOSFET, N CH, W/D, 30V, 5.8A, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:5.8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.03ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:2.1W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-23; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C

Manufacturer Aliases

Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
  • VISHA
  • Vishay Thin Film
  • Vishay Intertechnology
  • Vishay Semiconductors
  • VISAHY
  • VISHY
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • VISHAY FOIL RESISTORS
  • Vishay Semiconductor Opto Division
  • VISH/IR
  • VSHY
  • VSH
  • Vishay Intertech
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VSHAY
  • VISHAY ELECTRONIC
  • Vishay General Semiconductor - Diodes Division
  • Vishay Intertechnologies
  • VISHAY AMERICAS INC
  • Vishay Semiconductor Diodes Division
  • VISHAY PRECISION GROUP
  • VISHAY AMERICAS
  • Vishay Intertechnology Inc.

Technical Specifications

Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Weight1.437803 g
Technical
Continuous Drain Current (ID)5.8 A
Drain to Source Resistance30 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance335 pF
Max Operating Temperature150 °C
Max Power Dissipation2.1 W
Min Operating Temperature-55 °C
Nominal Vgs1.2 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation1.25 W
Rds On Max36 mΩ
Rise Time12 ns
Schedule B8541290080
Threshold Voltage1.2 V
Turn-Off Delay Time14 ns
Turn-On Delay Time5 ns

Documents

Download datasheets and manufacturer documentation for Vishay SI2366DS-T1-GE3.

Newark
Datasheet10 pages12 years ago
Datasheet10 pages9 years ago
Farnell
Datasheet10 pages8 years ago
RS (Formerly Allied Electronics)
Datasheet10 pages8 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement5 pages12 years ago