Vishay SI2342DS-T1-GE3

N-Channel 8 V 0.017 Ohm 2.5 W Surface Mount Power Mosfet - SOT-23-3
Datasheet

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Technical Specifications

Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)6 A
Drain to Source Breakdown Voltage8 V
Drain to Source Resistance14 mΩ
Drain to Source Voltage (Vdss)8 V
Fall Time25 ns
Gate to Source Voltage (Vgs)5 V
Input Capacitance1.07 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation1.3 W
Rds On Max17 mΩ
Rise Time14 ns
Schedule B8541290080
Threshold Voltage800 mV
Turn-Off Delay Time65 ns
Turn-On Delay Time6 ns
Dimensions
Height1.12 mm

Documents

Download datasheets and manufacturer documentation for Vishay SI2342DS-T1-GE3.

element14 APAC
Datasheet10 pages7 years ago
Newark
Datasheet9 pages3 years ago
Upverter
Datasheet10 pages4 years ago
Future Electronics
Datasheet10 pages11 years ago

Inventory History

3 month trend:
-3.48%

Engineering Resources

View Evaluation kits and Reference designs for Vishay SI2342DS-T1-GE3.

Related Parts

Descriptions

Descriptions of Vishay SI2342DS-T1-GE3 provided by its distributors.

N-Channel 8 V 0.017 Ohm 2.5 W Surface Mount Power Mosfet - SOT-23-3
Trans MOSFET N-CH 8V 6A 3-Pin SOT-23 T/R
MOSFET, N-CH, 8V, 6A, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 6A; Drain Source Voltage Vds: 8V; On Resistance Rds(on): 0.014ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 800mV; Power Dissipation Pd: 2.5W; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)
Small Signal Field-Effect Transistor, 6A I(D), 8V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Manufacturer Aliases

Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
  • VISHA
  • Vishay Thin Film
  • Vishay Intertechnology
  • Vishay Semiconductors
  • VISAHY
  • VISHY
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • VISHAY FOIL RESISTORS
  • Vishay Intertech
  • Vishay Semiconductor Opto Division
  • VISH/IR
  • VSHY
  • VSH
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VSHAY
  • VISHAY ELECTRONIC
  • Vishay General Semiconductor - Diodes Division
  • Vishay Intertechnologies
  • VISHAY AMERICAS INC
  • Vishay Semiconductor Diodes Division
  • VISHAY PRECISION GROUP
  • VISHAY AMERICAS
  • Vishay Intertechnology Inc.

Technical Specifications

Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)6 A
Drain to Source Breakdown Voltage8 V
Drain to Source Resistance14 mΩ
Drain to Source Voltage (Vdss)8 V
Fall Time25 ns
Gate to Source Voltage (Vgs)5 V
Input Capacitance1.07 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation1.3 W
Rds On Max17 mΩ
Rise Time14 ns
Schedule B8541290080
Threshold Voltage800 mV
Turn-Off Delay Time65 ns
Turn-On Delay Time6 ns
Dimensions
Height1.12 mm

Documents

Download datasheets and manufacturer documentation for Vishay SI2342DS-T1-GE3.

element14 APAC
Datasheet10 pages7 years ago
Newark
Datasheet9 pages3 years ago
Upverter
Datasheet10 pages4 years ago
Future Electronics
Datasheet10 pages11 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement5 pages12 years ago