Vishay SI2337DS-T1-E3
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 781-SI2337DS-E3 | 88,883 | 1 | Tape & Reel | 23h | ||||||||
| SI2337DS-T1-E3 | 6,000 | 3K | 5d | |||||||||
| 70026414 | 2,940 | 1 | Bulk | 1d | ||||||||
| SI2337DS-T1-E3 | 4 | 1 | Cut Tape | 6h | ||||||||
| SI2337DS-T1-E3 | 15,000 | 3K | 6h |
Technical Specifications
Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Pins3
Weight1.437803 g
Technical
Continuous Drain Current (ID)-2.2 A
Drain to Source Breakdown Voltage-80 V
Drain to Source Resistance216 mΩ
Drain to Source Voltage (Vdss)-80 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance500 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation760 mW
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation760 mW
Rds On Max270 mΩ
Resistance270 mΩ
Rise Time15 ns
Schedule B8541210080
Threshold Voltage-4 V
Turn-Off Delay Time20 ns
Turn-On Delay Time10 ns
Dimensions
Height1.02 mm
Length3.04 mm
Width1.4 mm
Inventory History
3 month trend: +2.46%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documents
Download datasheets and manufacturer documentation for Vishay SI2337DS-T1-E3.
Farnell
iiiC
RS (Formerly Allied Electronics)
Upverter
Engineering Resources
View Evaluation kits and Reference designs for Vishay SI2337DS-T1-E3.
Related Parts
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VishayTP0610K-T1-GE3
VISHAY - TP0610K-T1-GE3 - MOSFET-Transistor, p-Kanal, -185 mA, -60 V, 10 ohm, -4.5 V, -2 V
VishaySI2324DS-T1-GE3
Trans MOSFET N-CH 100V 2.3A 3-Pin SOT-23 T/R / MOSFET N-CH 100V 2.3A SOT-23
Descriptions
Descriptions of Vishay SI2337DS-T1-E3 provided by its distributors.
Single P-Channel 80 V 0.27 Ohms Surface Mount Power Mosfet - SOT-23
Trans Mosfet P-Ch 80V 1.2A 3-Pin To-236 T/R | Siliconix / Vishay SI2337DS-T1-E3
Small Signal Field-Effect Transistor, 3.2A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
P Channel Mosfet, -80V, 2.2A To-236, Full Reel; Channel Type:P Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:2.2A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:6V; Gate Source Threshold Voltage Max:4V Rohs Compliant: No |Vishay SI2337DS-T1-E3.
MOSFET, P CH, 80V, 2.2A, TO-236; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.2A; Drain Source Voltage Vds:-80V; On Resistance Rds(on):0.216ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:760mW; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-236; No. of Pins:3; Operating Temperature Range:-55°C to +150°C
Manufacturer Aliases
Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- VISHA
- Vishay Thin Film
- Vishay Intertechnology
- Vishay Semiconductors
- VISAHY
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- VISHAY FOIL RESISTORS
- Vishay Intertech
- Vishay Semiconductor Opto Division
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VSHAY
- VISHAY ELECTRONIC
- Vishay General Semiconductor - Diodes Division
- Vishay Intertechnologies
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY PRECISION GROUP
- VISHAY AMERICAS
- Vishay Intertechnology Inc.
Inventory History
3 month trend: +2.46%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Pins3
Weight1.437803 g
Technical
Continuous Drain Current (ID)-2.2 A
Drain to Source Breakdown Voltage-80 V
Drain to Source Resistance216 mΩ
Drain to Source Voltage (Vdss)-80 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance500 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation760 mW
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation760 mW
Rds On Max270 mΩ
Resistance270 mΩ
Rise Time15 ns
Schedule B8541210080
Threshold Voltage-4 V
Turn-Off Delay Time20 ns
Turn-On Delay Time10 ns
Dimensions
Height1.02 mm
Length3.04 mm
Width1.4 mm
Documents
Download datasheets and manufacturer documentation for Vishay SI2337DS-T1-E3.
Farnell
iiiC
RS (Formerly Allied Electronics)
Upverter
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements