Vishay SI2333CDS-T1-E3

Name: Vishay SI2333CDS-T1-E3
Brand: Vishay
SKU: SI2333CDS-T1-E3
Price: 0.72 USD
Availability: InStock

MOSFET, P CH, -12V, -7.1A, TO-236-3; Transistor Polarity: P Channel; Continuous D

Datasheet

Price and Stock

Distributor		SKU		MOQ	Pkg
Mouser		781-SI2333CDS-E3	88,570	1	Tape & Reel	0.720	0.604	0.425	0.272	0.237	4h
Avnet	2	88T7691	9,677	1		0.707	0.707	0.426	0.387	0.387	5d
Verical	3	SI2333CDS-T1-E3	3,000	3K						0.180	4h
Arrow Electronics		SI2333CDS-T1-E3	3,000	3K						0.180	1d
TME		SI2333CDS-T1-E3	3,000	1		0.684*	0.604*	0.410*	0.348*	0.348*	2d

Technical Specifications

Physical

Case/PackageSOT-23-3

MountSurface Mount

Number of Pins3

Weight1.437803 g

Technical

Continuous Drain Current (ID)5.1 A

Drain to Source Breakdown Voltage-12 V

Drain to Source Resistance35 mΩ

Drain to Source Voltage (Vdss)12 V

Element ConfigurationSingle

Fall Time35 ns

Gate to Source Voltage (Vgs)8 V

Input Capacitance1.225 nF

Max Operating Temperature150 °C

Max Power Dissipation2.5 W

Min Operating Temperature-55 °C

Number of Channels1

Number of Elements1

Power Dissipation1.25 W

Rds On Max35 mΩ

Resistance35 mΩ

Rise Time35 ns

Schedule B8541290080

Threshold Voltage-400 mV

Turn-Off Delay Time45 ns

Turn-On Delay Time13 ns

Dimensions

Height1.016 mm

Length3.0226 mm

Width1.397 mm

Inventory History

3 month trend: -4.44%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Documents

Download datasheets and manufacturer documentation for Vishay SI2333CDS-T1-E3.

Farnell

Datasheet9 pages11 years ago

Datasheet6 pages14 years ago

Datasheet9 pages9 years ago

Datasheet9 pages10 years ago

Newark

Datasheet9 pages8 years ago

iiiC

Datasheet9 pages11 years ago

RS (Formerly Allied Electronics)

Datasheet9 pages12 years ago

Inventory History

3 month trend:

-4.44%

Alternate Parts

This Part

Alternate Parts

VishaySI2333CDS-T1-E3

VishaySI2333CDS-T1-GE3

Price @ 1000

$ 0.24

$ 0.227

Stock

718,240

5,184,805

Authorized Distributors

Mount

Surface Mount

Case/Package

SOT-23-3

SOT-23

Drain to Source Voltage (Vdss)

12 V

-12 V

Continuous Drain Current (ID)

5.1 A

-5.1 A

Threshold Voltage

-400 mV

Rds On Max

35 mΩ

Gate to Source Voltage (Vgs)

8 V

Power Dissipation

1.25 W

Input Capacitance

1.225 nF

Engineering Resources

View Evaluation kits and Reference designs for Vishay SI2333CDS-T1-E3.

Related Parts

Descriptions

Descriptions of Vishay SI2333CDS-T1-E3 provided by its distributors.

MOSFET, P CH, -12V, -7.1A, TO-236-3; Transistor Polarity:P Channel; Continuous D

Newark

TRANS MOSFET P-CH 12V 5.1A 3-PIN SOT-23 T/R | Siliconix / Vishay SI2333CDS-T1-E3

RS (Formerly Allied Electronics)

Single P-Channel 12 V 35 mO 25 nC Surface Mount Power Mosfet - SOT-23

Future Electronics

12V 7.1A 35m´Î@4.5V5.1A 2.5W 1V@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS

Dasenic

Small Signal Field-Effect Transistor, 7.1A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Semicontronic

MOSFET, P CH, -12V, -7.1A, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-7.1A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.0285ohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:2.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-23; No. of Pins:3; MSL:-

Farnell