Vishay SI2323DDS-T1-GE3
Technical Specifications
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)-5.3 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance32 mΩ
Drain to Source Voltage (Vdss)-20 V
Element ConfigurationSingle
Fall Time11 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance1.16 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.7 W
Min Operating Temperature-55 °C
Number of Channels1
PackagingCut Tape (CT)
Power Dissipation960 mW
Rds On Max39 mΩ
Rise Time22 ns
Schedule B8541210080
Threshold Voltage-1 V
Turn-Off Delay Time52 ns
Turn-On Delay Time8 ns
Dimensions
Height1.12 mm
Inventory History
3 month trend: +6.64%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Vishay SI2323DDS-T1-GE3.
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Descriptions
Descriptions of Vishay SI2323DDS-T1-GE3 provided by its distributors.
SI2323DDS-T1-GE3 P-channel MOSFET Transistor, 4.3 A, 20 V, 3-Pin TO-236 | Siliconix / Vishay SI2323DDS-T1-GE3
MOSFET, P-CH, -20V, -5.3A, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-5.3A; Source Voltage Vds:-20V; On Resistance
Small Signal Field-Effect Transistor, 5.3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, P-CH, -20V, -5.3A, SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: -5.3A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.032ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 1.7W; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)
Manufacturer Aliases
Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- VISHA
- Vishay Thin Film
- Vishay Intertechnology
- Vishay Semiconductors
- VISAHY
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- VISHAY FOIL RESISTORS
- Vishay Semiconductor Opto Division
- VISH/IR
- VSHY
- VSH
- Vishay Intertech
- VISHAY INTERTECHNOLOGY ASIA PT
- VSHAY
- VISHAY ELECTRONIC
- Vishay General Semiconductor - Diodes Division
- Vishay Intertechnologies
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY PRECISION GROUP
- VISHAY AMERICAS
- Vishay Intertechnology Inc.
Inventory History
3 month trend: +6.64%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)-5.3 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance32 mΩ
Drain to Source Voltage (Vdss)-20 V
Element ConfigurationSingle
Fall Time11 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance1.16 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.7 W
Min Operating Temperature-55 °C
Number of Channels1
PackagingCut Tape (CT)
Power Dissipation960 mW
Rds On Max39 mΩ
Rise Time22 ns
Schedule B8541210080
Threshold Voltage-1 V
Turn-Off Delay Time52 ns
Turn-On Delay Time8 ns
Dimensions
Height1.12 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements