Vishay SI2318CDS-T1-GE3
Technical Specifications
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight1.437803 g
Technical
Continuous Drain Current (ID)4.3 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance35 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance340 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.1 W
Min Operating Temperature-55 °C
Nominal Vgs1.2 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation1.25 W
Rds On Max42 mΩ
Resistance42 mΩ
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time14 ns
Turn-On Delay Time12 ns
Dimensions
Height1.02 mm
Length3.04 mm
Width1.4 mm
Inventory History
3 month trend: -60.58%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documents
Download datasheets and manufacturer documentation for Vishay SI2318CDS-T1-GE3.
Farnell
TME
RS (Formerly Allied Electronics)
Engineering Resources
View Evaluation kits and Reference designs for Vishay SI2318CDS-T1-GE3.
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Descriptions
Descriptions of Vishay SI2318CDS-T1-GE3 provided by its distributors.
N-Channel 40 V 0.042 Ohm 2.1 W Surface Moun Power Mosfet - SOT-23-3
SI2318CDS-T1-GE3 N-channel MOSFET Transistor, 5.6 A, 40 V, 3-Pin SOT-23 | Siliconix / Vishay SI2318CDS-T1-GE3
Trans MOSFET N-CH 40V 4.3A 3-Pin SOT-23 T/R
Small Signal Field-Effect Transistor, 5.6A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET,N CH,40V,5.6A,DIODE,SOT23; Transistor Polarity:N Channel; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.035ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.25W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; Current Id Max:4.3A; Power Dissipation Pd:1.25W; Voltage Vgs Max:20V
Manufacturer Aliases
Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- VISHA
- Vishay Thin Film
- Vishay Intertechnology
- Vishay Semiconductors
- VISAHY
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- VISHAY FOIL RESISTORS
- Vishay Semiconductor Opto Division
- VISH/IR
- VSHY
- VSH
- Vishay Intertech
- VISHAY INTERTECHNOLOGY ASIA PT
- VSHAY
- VISHAY ELECTRONIC
- Vishay General Semiconductor - Diodes Division
- Vishay Intertechnologies
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY PRECISION GROUP
- VISHAY AMERICAS
- Vishay Intertechnology Inc.
Inventory History
3 month trend: -60.58%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight1.437803 g
Technical
Continuous Drain Current (ID)4.3 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance35 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance340 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.1 W
Min Operating Temperature-55 °C
Nominal Vgs1.2 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation1.25 W
Rds On Max42 mΩ
Resistance42 mΩ
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time14 ns
Turn-On Delay Time12 ns
Dimensions
Height1.02 mm
Length3.04 mm
Width1.4 mm
Documents
Download datasheets and manufacturer documentation for Vishay SI2318CDS-T1-GE3.
Farnell
TME
RS (Formerly Allied Electronics)
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnknown
RoHSCompliant
Compliance Statements