Vishay SI2315BDS-T1-E3

Single P-Channel 12 V 0.05 Ohms Surface Mount Power Mosfet - SOT-23
Datasheet

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Technical Specifications

Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Weight1.437803 g
Technical
Continuous Drain Current (ID)-3 A
Current3 A
Drain to Source Breakdown Voltage-12 V
Drain to Source Resistance40 mΩ
Drain to Source Voltage (Vdss)-12 V
Dual Supply Voltage-12 V
Element ConfigurationSingle
Fall Time35 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance715 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation750 mW
Min Operating Temperature-55 °C
Nominal Vgs-900 mV
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation750 mW
Rds On Max50 mΩ
Resistance50 mΩ
Rise Time35 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage-900 mV
Turn-Off Delay Time50 ns
Turn-On Delay Time15 ns
Voltage12 V
Dimensions
Height1.02 mm
Length3.04 mm
Width1.4 mm

Documents

Download datasheets and manufacturer documentation for Vishay SI2315BDS-T1-E3.

Farnell
Datasheet6 pages12 years ago
Datasheet6 pages14 years ago
Datasheet6 pages15 years ago
Datasheet5 pages20 years ago
Newark
Datasheet9 pages8 years ago
Datasheet9 pages9 years ago
Datasheet6 pages18 years ago
Upverter
Datasheet9 pages4 years ago
TME
Datasheet9 pages8 years ago
iiiC
Datasheet9 pages11 years ago
Arrow Electronics
Datasheet9 pages11 years ago
Jameco
Datasheet7 pages15 years ago
RS (Formerly Allied Electronics)
Datasheet5 pages18 years ago

Inventory History

3 month trend:
+9.79%

Engineering Resources

View Evaluation kits and Reference designs for Vishay SI2315BDS-T1-E3.

Related Parts

Descriptions

Descriptions of Vishay SI2315BDS-T1-E3 provided by its distributors.

Single P-Channel 12 V 0.05 Ohms Surface Mount Power Mosfet - SOT-23
Transistor: P-MOSFET; unipolar; -12V; -3A; 0.75W; SOT23
Trans MOSFET P-CH 12V 3A 3-Pin SOT-23 T/R
Small Signal Field-Effect Transistor, 2.3A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Mosfet, P Channel, -12V, -3A, Sot-23-3, Full Reel; Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:3A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Power Dissipation:750Mw Rohs Compliant: No |Vishay SI2315BDS-T1-E3.
MOSFET, P REEL 3K; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-12V; Current, Id Cont:3A; Resistance, Rds On:0.05ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:-0.9V; Case Style:SOT-23; Termination Type:SMD; Current, Id Max:3.0A; Current, Idm Pulse:12A; No. of Pins:3; Power Dissipation:0.75W; Power Output:0.75W; Power, Pd:0.75W; Power, Ptot:0.75W; Quantity, Reel:3000; Resistance, Rds on @ Vgs = 2.5V P Channel:0.065ohm; Resistance, Rds on @ Vgs = 4.5V P Channel:0.05ohm; Resistance, Rds on Max:0.05ohm; SMD Marking:M5; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Voltage, Rds Measurement:4.5V; Voltage, Vds:12V; Voltage, Vds Max:12V; Voltage, Vgs th Max:-0.9V; Voltage, Vgs th Min:-0.45V; Width, Tape:8mm

Manufacturer Aliases

Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
  • VISHA
  • Vishay Thin Film
  • Vishay Intertechnology
  • Vishay Semiconductors
  • VISAHY
  • VISHY
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • VISHAY FOIL RESISTORS
  • Vishay Semiconductor Opto Division
  • VISH/IR
  • VSHY
  • VSH
  • Vishay Intertech
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VSHAY
  • VISHAY ELECTRONIC
  • Vishay General Semiconductor - Diodes Division
  • Vishay Intertechnologies
  • VISHAY AMERICAS INC
  • Vishay Semiconductor Diodes Division
  • VISHAY PRECISION GROUP
  • VISHAY AMERICAS
  • Vishay Intertechnology Inc.

Part Number Aliases

This part may be known by these alternate part numbers:

  • SI2315BDS-T1-E3.
  • SI2315BDST1E3

Technical Specifications

Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Weight1.437803 g
Technical
Continuous Drain Current (ID)-3 A
Current3 A
Drain to Source Breakdown Voltage-12 V
Drain to Source Resistance40 mΩ
Drain to Source Voltage (Vdss)-12 V
Dual Supply Voltage-12 V
Element ConfigurationSingle
Fall Time35 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance715 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation750 mW
Min Operating Temperature-55 °C
Nominal Vgs-900 mV
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation750 mW
Rds On Max50 mΩ
Resistance50 mΩ
Rise Time35 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage-900 mV
Turn-Off Delay Time50 ns
Turn-On Delay Time15 ns
Voltage12 V
Dimensions
Height1.02 mm
Length3.04 mm
Width1.4 mm

Documents

Download datasheets and manufacturer documentation for Vishay SI2315BDS-T1-E3.

Farnell
Datasheet6 pages12 years ago
Datasheet6 pages14 years ago
Datasheet6 pages15 years ago
Datasheet5 pages20 years ago
Newark
Datasheet9 pages8 years ago
Datasheet9 pages9 years ago
Datasheet6 pages18 years ago
Upverter
Datasheet9 pages4 years ago
TME
Datasheet9 pages8 years ago
iiiC
Datasheet9 pages11 years ago
Arrow Electronics
Datasheet9 pages11 years ago
Jameco
Datasheet7 pages15 years ago
RS (Formerly Allied Electronics)
Datasheet5 pages18 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement5 pages12 years ago