PHOTODIODE, 880NM; Peak Wavelength:880nm; Forward Current If(AV):50mA; Rise Time:700ns; Fall Time tf:700ns; Viewing Angle:15°; Supply Voltage Range:1.7V; Operating Temperature Range:-40°C to +85°C; Diode Case Style:T-1 (3mm); No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Forward Current If:20mA; Forward Current If Max:20mA; Forward Voltage VF Max:1.7V; LED Colour:Infrared; Mounting Type:Through Hole; Package / Case:T-1; Power Dissipation Pd:70mW; Wavelength Typ:880nm
SEP8705 Series AlGaAs Infrared Emitting Diode, T-1 Package The SEP8705 is an aluminum gallium arsenide infrared emitting diode transfer molded in a T-1 smoke gray plastic package. Transfer molding of this device assures superior optical centerline performance compared to other molding processes. These devices typically exhibit 70% greater power intensity compared to GaAs devices at the same forward current. Lead lengths are staggered to provide a simple method of polarity identification.