IR EMITTING DIODE; Typ Wavelength:880nm; Power Dissipation:150mW; Forward Current:100mA; Max Voltage Vf:1.9V; Viewing Angle:90°; Case Style:TO-46; Operating Temperature Range:-55°C to +125°C; Fall Time Tf:0.7µs; Material:Metal; Max PIV:3V; Power Output:10.5mW; Rise Time:0.7µs
SE3470 Series AlGaAs Infrared Emitting Diode, TO-46 Metal Can The SE3470/5470 series consists of aluminum gallium arsenide infrared emitting diode mounted in a TO-46 metal can package. The SE3470 series has flat window cans providing a wide beam angle, while the SE5470 series has glass lensed cans providing a narrow beam angle. These devices typically exhibit 70% greater power output than gallium arsenide devices at the same forward current. The TO-46 packages offer high power dissipation capability and are ideally suited for operation in hostile environments.