onsemi RFP12N10L
Production
Technical Specifications
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Weight4.535924 g
Technical
Continuous Drain Current (ID)12 A
Current12 A
Current Rating12 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance200 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time80 ns
Gate to Source Voltage (Vgs)10 V
Input Capacitance900 pF
Max Operating Temperature150 °C
Max Power Dissipation60 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation60 W
Rds On Max200 mΩ
Resistance200 mΩ
Rise Time70 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time100 ns
Turn-On Delay Time15 ns
Voltage100 V
Voltage Rating (DC)100 V
Dimensions
Height9.4 mm
Length10.67 mm
Width4.83 mm
Inventory History
3 month trend: +53.71%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Documents
Download datasheets and manufacturer documentation for onsemi RFP12N10L.
Upverter
Future Electronics
TME
Farnell
Jameco
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.496
$ 0.447
Stock
455,867
348
Authorized Distributors
10
1
Mount
Through Hole
-
Case/Package
TO-220AB
-
Drain to Source Voltage (Vdss)
100 V
100 V
Continuous Drain Current (ID)
12 A
12 A
Threshold Voltage
2 V
-
Rds On Max
200 mΩ
-
Gate to Source Voltage (Vgs)
10 V
10 V
Power Dissipation
60 W
60 W
Input Capacitance
900 pF
-
Supply Chain
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi RFP12N10L.
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onsemiFQP13N10L
N-Channel Power MOSFET, Logic Level, QFET®, 100 V, 12.8 A, 180 mΩ, TO-220
Descriptions
Descriptions of onsemi RFP12N10L provided by its distributors.
Transistor RFP12N10L MOSFET N-Channel 100 Volt 12 Amp TO-220
Trans MOSFET N-CH Si 100V 12A Automotive 3-Pin(3+Tab) TO-220AB Rail
N-Channel Logic Level Power MOSFET 100V, 12A, 200mΩ
TRANSISTOR, MOSFET, N, 100V, 12A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.2ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 2V
100 V, 12 A, 0.200 OHM, LOGIC LEVEL, N-CHANNEL POWER MOSFET Power Field-Effect Transistor, 12A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09526.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: +53.71%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Weight4.535924 g
Technical
Continuous Drain Current (ID)12 A
Current12 A
Current Rating12 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance200 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time80 ns
Gate to Source Voltage (Vgs)10 V
Input Capacitance900 pF
Max Operating Temperature150 °C
Max Power Dissipation60 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation60 W
Rds On Max200 mΩ
Resistance200 mΩ
Rise Time70 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time100 ns
Turn-On Delay Time15 ns
Voltage100 V
Voltage Rating (DC)100 V
Dimensions
Height9.4 mm
Length10.67 mm
Width4.83 mm
Documents
Download datasheets and manufacturer documentation for onsemi RFP12N10L.
Upverter
Future Electronics
TME
Farnell
Jameco
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements