onsemi RFD14N05LSM
Production
Technical Specifications
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Weight260.37 mg
Technical
Continuous Drain Current (ID)14 A
Current Rating14 A
Drain to Source Breakdown Voltage50 V
Drain to Source Resistance100 mΩ
Drain to Source Voltage (Vdss)50 V
Dual Supply Voltage50 V
Element ConfigurationSingle
Fall Time16 ns
Gate to Source Voltage (Vgs)10 V
Input Capacitance670 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation48 W
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation48 W
Rds On Max100 mΩ
Recovery Time125 ns
Resistance100 mΩ
Rise Time24 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage2 V
Turn-Off Delay Time42 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)50 V
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm
Inventory History
3 month trend: +7.21%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Documents
Download datasheets and manufacturer documentation for onsemi RFD14N05LSM.
TME
Fairchild Semiconductor
Future Electronics
iiiC
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.418
$ 0.334
Stock
446,293
424,435
Authorized Distributors
10
4
Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
Drain to Source Voltage (Vdss)
50 V
50 V
Continuous Drain Current (ID)
14 A
14 A
Threshold Voltage
2 V
2 V
Rds On Max
100 mΩ
100 mΩ
Gate to Source Voltage (Vgs)
10 V
10 V
Power Dissipation
48 W
48 W
Input Capacitance
670 pF
670 pF
Supply Chain
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi RFD14N05LSM.
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Descriptions
Descriptions of onsemi RFD14N05LSM provided by its distributors.
N-Channel Logic Level Power MOSFET 50V, 14A, 100mΩ
N-Channel 50 V 0.1 Ohm Surface Mount Logic Level Power Mosfet - TO-252AA
Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N, LOGIC, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:50V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:48W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:14A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:DPAK; Power Dissipation Pd:48W; Power Dissipation Pd:40W; Pulse Current Idm:20A; SMD Marking:RFD14N05; Termination Type:SMD; Voltage Vds Typ:50V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V
These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V-5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA09870.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: +7.21%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Weight260.37 mg
Technical
Continuous Drain Current (ID)14 A
Current Rating14 A
Drain to Source Breakdown Voltage50 V
Drain to Source Resistance100 mΩ
Drain to Source Voltage (Vdss)50 V
Dual Supply Voltage50 V
Element ConfigurationSingle
Fall Time16 ns
Gate to Source Voltage (Vgs)10 V
Input Capacitance670 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation48 W
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation48 W
Rds On Max100 mΩ
Recovery Time125 ns
Resistance100 mΩ
Rise Time24 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage2 V
Turn-Off Delay Time42 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)50 V
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm
Documents
Download datasheets and manufacturer documentation for onsemi RFD14N05LSM.
TME
Fairchild Semiconductor
Future Electronics
iiiC
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements