onsemi QRE1113GR

QRE1113 Series 30 V 50 mA Miniature Reflective Object Sensor - SMD-4
Production

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageSMD/SMT
Contact PlatingTin
MountSurface Mount
Number of Pins4
Weight78 mg
Technical
Collector Emitter Breakdown Voltage30 V
Collector Emitter Voltage (VCEO)30 V
Dark Current1 nA
Fall Time20 µs
Forward Current50 mA
Forward Voltage1.2 V
Input Current50 mA
Max Breakdown Voltage30 V
Max Collector Current900 µA
Max Operating Temperature85 °C
Max Power Dissipation75 mW
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
Operating Supply Voltage1.7 V
Output TypePhototransistor
Output Voltage20 V
PackagingCut Tape
Power Dissipation75 mW
Response Time20 µs
Reverse Breakdown Voltage5 V
Reverse Voltage (DC)5 V
Rise Time20 µs
Schedule B8541408000
Sensing Distance5.0038 mm
Wavelength940 nm
Dimensions
Height1.7 mm
Length3.6 mm
Width2.9 mm

Documents

Download datasheets and manufacturer documentation for onsemi QRE1113GR.

Upverter
Datasheet8 pages8 years ago
Datasheet8 pages10 years ago
Datasheet9 pages4 years ago
Technical Drawing1 page4 years ago
onsemi
Datasheet8 pages5 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Fairchild Semiconductor
Datasheet8 pages12 years ago
Technical Drawing1 page11 years ago
element14 APAC
Datasheet8 pages8 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Farnell
Datasheet0 pages0 years ago
Datasheet6 pages16 years ago
Datasheet0 pages0 years ago
Newark
Datasheet0 pages0 years ago
Mouser
Datasheet5 pages21 years ago
Future Electronics
Datasheet7 pages6 years ago
Datasheet6 pages16 years ago
iiiC
Datasheet8 pages12 years ago
element14
Datasheet8 pages14 years ago
Jameco
Datasheet7 pages15 years ago

Inventory History

3 month trend:
+23.68%

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for onsemi QRE1113GR.

Related Parts

Descriptions

Descriptions of onsemi QRE1113GR provided by its distributors.

QRE1113 Series 30 V 50 mA Miniature Reflective Object Sensor - SMD-4
Photointerrupter Reflective Phototransistor 4-Pin Miniature SMT T/R - Tape and Reel
AS6081 Certified Vendor, Ships Same day, 1 Year Warranty
Infrared Emitter/Sensor Assemblies Reflective Sensor
20mA 1mm SMD-4P Reflective Optical Interrupters ROHS
French Electronic Distributor since 1988
4L Reflect Snsr T&R Rohs Compliant: Yes
SENSOR OPTO TRANS REFL SMD PHOTO
OPTO CPLR, PHOTOTRANSISTOR O/P, SMD-4; Sensor Output: Phototransistor; Sensor Mounting: SMD; Sensing Distance: 5mm; Forward Current If: 50mA; Reverse Voltage Vr: 5V; Collector Emitter Voltage V(br)ceo: 30V; Forward Voltage: 1.2V; Product Range: QRE1113GR; SVHC: No SVHC (27-Jun-2018); Input Current: 50mA; No. of Channels: 1Channels; No. of Pins: 4Pins; Optocoupler Output Type: Phototransistor; Output Voltage: 30V

Manufacturer Aliases

onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON SEMICONDUCTOR CORP
  • ON Semiconductor Corporation
  • ON4
  • onsemi / Fairchild
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor

Part Number Aliases

This part may be known by these alternate part numbers:

  • QRE1113GR.

Technical Specifications

Physical
Case/PackageSMD/SMT
Contact PlatingTin
MountSurface Mount
Number of Pins4
Weight78 mg
Technical
Collector Emitter Breakdown Voltage30 V
Collector Emitter Voltage (VCEO)30 V
Dark Current1 nA
Fall Time20 µs
Forward Current50 mA
Forward Voltage1.2 V
Input Current50 mA
Max Breakdown Voltage30 V
Max Collector Current900 µA
Max Operating Temperature85 °C
Max Power Dissipation75 mW
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
Operating Supply Voltage1.7 V
Output TypePhototransistor
Output Voltage20 V
PackagingCut Tape
Power Dissipation75 mW
Response Time20 µs
Reverse Breakdown Voltage5 V
Reverse Voltage (DC)5 V
Rise Time20 µs
Schedule B8541408000
Sensing Distance5.0038 mm
Wavelength940 nm
Dimensions
Height1.7 mm
Length3.6 mm
Width2.9 mm

Documents

Download datasheets and manufacturer documentation for onsemi QRE1113GR.

Upverter
Datasheet8 pages8 years ago
Datasheet8 pages10 years ago
Datasheet9 pages4 years ago
Technical Drawing1 page4 years ago
onsemi
Datasheet8 pages5 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Fairchild Semiconductor
Datasheet8 pages12 years ago
Technical Drawing1 page11 years ago
element14 APAC
Datasheet8 pages8 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Farnell
Datasheet0 pages0 years ago
Datasheet6 pages16 years ago
Datasheet0 pages0 years ago
Newark
Datasheet0 pages0 years ago
Mouser
Datasheet5 pages21 years ago
Future Electronics
Datasheet7 pages6 years ago
Datasheet6 pages16 years ago
iiiC
Datasheet8 pages12 years ago
element14
Datasheet8 pages14 years ago
Jameco
Datasheet7 pages15 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement3 pages3 years ago
Rohs Statement3 pages10 years ago
Materials Sheet3 pages10 years ago
Rohs Statement3 pages10 years ago
Reach Statement3 pages9 years ago
Materials Sheet3 pages9 years ago
Reach Statement8 pages9 years ago
Reach Statement2 pages11 years ago
Rohs Statement1 page12 years ago
Rohs Statement1 page10 years ago