NXP Semiconductors PUMD3
Technical Specifications
Physical
Case/PackageSOT-363
MountSurface Mount
Number of Pins6
Technical
Ambient Temperature Range High150 °C
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage150 mV
Collector Emitter Voltage (VCEO)50 V
Emitter Base Voltage (VEBO)10 V
hFE Min30
Max Collector Current100 mA
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Operating Temperature-65 °C
Number of Elements2
PackagingCut Tape
PolarityNPN, PNP
Power Dissipation200 mW
Dimensions
Height1.1 mm
Length2.2 mm
Width1.35 mm
Inventory History
3 month trend: -55.27%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documents
Download datasheets and manufacturer documentation for NXP Semiconductors PUMD3.
Newark
Farnell
Engineering Resources
View Evaluation kits and Reference designs for NXP Semiconductors PUMD3.
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Descriptions
Descriptions of NXP Semiconductors PUMD3 provided by its distributors.
Bipolar (Bjt) Array Transistor, Brt, Npn, Pnp, 50 V, 200 Mw, 100 Ma, 30, Sot-363
Trans Digital BJT NPN/PNP 50V 100mA Automotive 6-Pin TSSOP
NPN/PNP RESISTOR-EQUIPPED TRANSISTOR Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
100 mA 50 V 2 CHANNEL NPN AND PNP Si SMALL SIGNAL TRANSISTOR
Transistor Polarity = NPN / Transistor Polarity = PNP / Configuration = Dual / Continuous Collector Current (Ic) mA = 100 / DC Current Gain (hFE) = 30 / Power Dissipation (Pd) mW = 200 / Typical Input Resistor kOhm = 10 / Typical Resistor Ratio kOhm = 1 / Collector-Base Voltage (Vcbo) V = 50 / Collector-Emitter Voltage (Vceo) V = 50 / Emitter-Base Voltage (Vebo) V = 10 / Operating Temperature Max. °C = 150 / Operating Temperature Min. °C = -65 / Package Type = SOT-363 / Pins = 6 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 150 / Reflow Temperature Max. °C = 260 / Operating Frequency MHz = 230
Manufacturer Aliases
NXP Semiconductors has several brands around the world that distributors may use as alternate names. NXP Semiconductors may also be known as the following names:
- NXP
- PHILIPS
- PHIL
- PHI
- PHILLIPS
- NXP USA Inc
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- Philips Semiconductor
- NXP/PHILIPS
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- PHILIPS ECG
- NXP / Freescale
- PHILL
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
Inventory History
3 month trend: -55.27%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOT-363
MountSurface Mount
Number of Pins6
Technical
Ambient Temperature Range High150 °C
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage150 mV
Collector Emitter Voltage (VCEO)50 V
Emitter Base Voltage (VEBO)10 V
hFE Min30
Max Collector Current100 mA
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Operating Temperature-65 °C
Number of Elements2
PackagingCut Tape
PolarityNPN, PNP
Power Dissipation200 mW
Dimensions
Height1.1 mm
Length2.2 mm
Width1.35 mm
Documents
Download datasheets and manufacturer documentation for NXP Semiconductors PUMD3.
Newark
Farnell