Vishay U309
Obsolete
Cadeia de suprimentos
Export Control Classification Number (ECCN) CodeEAR99
Lifecycle StatusObsolete (Last Updated: 5 months ago)
Descrições
Descrições de Vishay U309 fornecidas pelos seus distribuidores.
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-206AC
N-Channel FETs 450MHz Amp
TO206AC NCH JFET
Xstr Jfet N-Ch
Transistor; Transistor Type:JFET; Breakdown Voltage, Vbr:-25V; Gate-Source Cutoff Voltage Max, Vgs(off):-4V; Continuous Drain Current, Id:30mA; Current Rating:20mA; Gate-Source Breakdown Voltage:-25V; Gate-Source Cutoff Voltage:-4V ;RoHS Compliant: No
Nomes alternativos do fabricante
Vishay possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. Vishay também pode ser conhecido(a) pelos seguintes nomes:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Especificações técnicas
Physical
Body MaterialMetal
Case/PackageSOT-23
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight200.998119 mg
Technical
Breakdown Voltage-25 V
Continuous Drain Current (ID)30 mA
Current Rating20 mA
Drain to Source Resistance35 Ω
Element ConfigurationSingle
Gain10 dB
Gate to Source Voltage (Vgs)-25 V
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk