Vishay SUP50N03-5M1P-GE3

SUP50N03-5M1P-GE3 N-channel Mosfet Transistor, 50 A, 30 V, 3-PIN TO-220AB
Obsolete
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DistributorSKUMinPkg
AvnetSUP50N03-5M1P-GE30500
11h
FarnellSUP50N03-5M1P-GE305
9h
Component Stockers USASUP50N03-5M1P-GE3303
>1wk
Win SourceWS-SUP50N03-5M1P-GE320.000360
9h
SHENGYU ELECTRONICSSUP50N03-5M1P-GE38.7991
4h

Fichas técnicas e documentos

Baixe as fichas de dados e a documentação do fabricante para Vishay SUP50N03-5M1P-GE3.

IHS

Datasheet7 páginas11 anos atrás

element14 APAC

Newark

Farnell

RS (Formerly Allied Electronics)

Cadeia de suprimentos

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2010-04-29
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-10-29
LTD Date2017-04-29

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Descrições

Descrições de Vishay SUP50N03-5M1P-GE3 fornecidas pelos seus distribuidores.

SUP50N03-5M1P-GE3 N-CHANNEL MOSFET TRANSISTOR, 50 A, 30 V, 3-PIN TO-220AB
RS (Formerly Allied Electronics)
Trans MOSFET N-CH 30V 50A 3-Pin(3+Tab) TO-220AB
Avnet
Power Field-Effect Transistor, 50A I(D), 30V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IHS
MOSFET,N CH,DIODE,30V,50A,TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4200µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:2.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:2.7W; Voltage Vgs Max:20V
element14 APAC

Imagens

RS
RS (Formerly Allied Electronics)
iiiC

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