Vishay SIHF7N60E-E3

VISHAY SIHF7N60E-E3 MOSFET Transistor, N Channel, 7 A, 600 V, 0.5 ohm, 10 V, 2 V
$ 1.15
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TME
2
SIHF7N60E-E301
12h
TTISIHF7N60E-E301KTube
3d
Future ElectronicsSIHF7N60E-E301KTape & Reel
AvnetSIHF7N60E-E301K
1d
TTI EuropeSIHF7N60E-E301KTube
3d

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Baixe as fichas de dados e a documentação do fabricante para Vishay SIHF7N60E-E3.

IHS

Datasheet9 páginas7 anos atrás

Farnell

element14 APAC

Newark

Cadeia de suprimentos

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descrições

Descrições de Vishay SIHF7N60E-E3 fornecidas pelos seus distribuidores.

VISHAY SIHF7N60E-E3 MOSFET Transistor, N Channel, 7 A, 600 V, 0.5 ohm, 10 V, 2 V
Fly-Wing Technology
SiHF7N60E Series 600 V 7 A 31 W Through Hole Power Mosfet - TO-220FP
Future Electronics
Trans MOSFET N-CH 600V 7A 3-Pin(3+Tab) TO-220FP
Verical
Power Field-Effect Transistor, 7A I(D), 609V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IHS
MOSFET, N-CH, 600V, 7A, TO220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.5ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:31W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220FP; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
Farnell

Imagens

Vishay
Newark
Newark
Farnell
Future Electronics
Newark

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