Vishay SI8424CDB-T1-E1

SI8424CDB-T1-E1 N-channel Mosfet Transistor, 10 A, 8 V, 4-PIN Micro Foot
$ 0.26
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DistributorSKUMinPkg
Newark
2
SI8424CDB-T1-E117.5005Cut Tape
Arrow Electronics
2
SI8424CDB-T1-E12.5001
Verical
2
SI8424CDB-T1-E12.50032
DigiKey
2
SI8424CDB-T1-E1CT-ND5501Cut Tape
TTISI8424CDB-T1-E16.0003KTape & Reel
2h

Fichas técnicas e documentos

Baixe as fichas de dados e a documentação do fabricante para Vishay SI8424CDB-T1-E1.

Newark

Datasheet11 páginas10 anos atrás

element14 APAC

RS (Formerly Allied Electronics)

Future Electronics

Histórico de estoque

Tendência de 3 meses:
-8.97%
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Cadeia de suprimentos

Country of OriginGermany
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-03-14
Lifecycle StatusProduction (Last Updated: 2 weeks ago)

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Descrições

Descrições de Vishay SI8424CDB-T1-E1 fornecidas pelos seus distribuidores.

SI8424CDB-T1-E1 N-CHANNEL MOSFET TRANSISTOR, 10 A, 8 V, 4-PIN MICRO FOOT
RS (Formerly Allied Electronics)
Single N-Channel 8 V 20 mOhm 25 nC Surface Mount Power Mosfet - MICRO FOOT
Future Electronics
Trans MOSFET N-CH 8V 10A 4-Pin Micro Foot T/R
Verical
Power Field-Effect Transistor, 10A I(D), 8V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IHS
N-Ch Micro Foot 1.6x1.6 8V 20mohms @ 4.5V Rated
Newark
Vishay NMOS, Vds=8 V, 6.3 A, WL-CSP
UnikeyIC
MOSFET, N-CH, 8V, 10A, MICRO FOOT; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 8V; On Resistance Rds(on): 0.015ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 800mV; Power Dissipation Pd: 2.7W; Transistor Case Style: MICRO FOOT; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)
Farnell

Imagens

Vishay
Newark
RS
Farnell
RS APAC
Future Electronics

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