Vishay SI4412DY

Power Field-Effect Transistor, 7A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Obsolete

Preço e estoque

Fichas técnicas e documentos

Baixe as fichas de dados e a documentação do fabricante para Vishay SI4412DY.

IHS

Datasheet5 páginas17 anos atrás
Datasheet5 páginas25 anos atrás

Arrow Electronics

Newark

Mouser

Histórico de estoque

Tendência de 3 meses:
+0.00%

Cadeia de suprimentos

Export Control Classification Number (ECCN) CodeEAR99
Lifecycle StatusObsolete (Last Updated: 4 months ago)

Descrições

Descrições de Vishay SI4412DY fornecidas pelos seus distribuidores.

Power Field-Effect Transistor, 7A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
2.5W 20V 19.5nC@ 10V 30V 28m¦¸@ 10V SOP 5mm*4mm*1.55mm
N-Channel MOSFETs 30V 7A 2.5W
30V N-CH SO8 0.05R
MOSFET, N, SO-8; Transistor type:MOSFET; Voltage, Vds typ:30V; Current, Id cont:7A; Resistance, Rds on:0.042R; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:1V; Case style:SO-8 (SOIC-8); Charge, gate n-channel:19.5nC; Current, Idm pulse:30A; Depth, external:5.26mm; Length / Height, external:1.2mm; Marking, SMD:SI4412DY; Pins, No. of:8; Power dissipation:2.5W; Power, Pd:2.5W; Resistance, Rds on @ Vgs = 10V:0.028R; Resistance, Rds on @ Vgs = 4.5V:0.042R; Resistance, Rds on max:0.028R; Temperature, Tj max:150°C; Temperature, Tj min:-55°C; Temperature, current:25°C; Temperature, full power rating:25°C; Termination Type:SMD; Transistor polarity:N; Transistors, No. of:1; Voltage, Vds max:30V; Voltage, Vgs max:20V; Voltage, Vgs th min:1V; Width, external:6.2mm

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