STMicroelectronics LET9045F

LET9045F Series 960 MHz 108 W 80 V N-Channel RF Power Transistor MOSFET - M-250
Obsolete
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DistributorSKUMinPkg
FarnellLET9045F02500
17h
Microchip USALET9045F11050Tray
3d
Win SourceWS-LET9045F206
7h
Worldway ElectronicsLET9045F12.7157Tray
2d
IC Components Ltd.LET9045F6.200
3d

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IHS

Datasheet10 páginas20 anos atrás

Future Electronics

Cadeia de suprimentos

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-11-02
Lifecycle StatusObsolete (Last Updated: 1 month ago)

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Descrições

Descrições de STMicroelectronics LET9045F fornecidas pelos seus distribuidores.

LET9045F Series 960 MHz 108 W 80 V N-Channel RF Power Transistor MOSFET - M-250
Future Electronics
45W 28V HF to 2GHz LDMOS TRANSISTOR in flangeless package
STMicroelectronics
RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs
STMicroelectronics SCT
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
IHS
MOSFET, RF, N-CH, 80V, 9A, M250-3; Drain Source Voltage Vds: 80V; Continuous Drain Current Id: 9A; Power Dissipation Pd: 108W; Operating Frequency Min: -; Operating Frequency Max: 1GHz; RF Transistor Case: M250; No. of Pins: 3P
Farnell

Imagens

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Lanka Micro
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