STMicroelectronics IRF640.
Obsolete
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Cadeia de suprimentos
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1992-07-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2007-06-26
LTD Date2007-12-26
Descrições
Descrições de STMicroelectronics IRF640. fornecidas pelos seus distribuidores.
MOSFET, POWER; N-CHANNEL; 0.15 OHMS (TYP.); 200 V (MIN.) @ +25C; 200V; TO-220
N-channel TrenchMOS transistor | MOSFET N-CH 200V 18A TO-220
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:18A; On-Resistance, Rds(on):0.18ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB; Leaded Process Compatible:Yes RoHS Compliant: Yes
MOSFET, N, TO-220; Transistor type:MOSFET; Current, Id cont:18A; Resistance, Rds on:0.18ohm; Case style:TO-220 (SOT-78B); Capacitance, Ciss typ:1200pF; Case style, alternate:SOT-78B; Current, Idm pulse:72A; Energy, avalanche single pulse Eas:280mJ; Pin configuration:a; Pin format:1G, (2+Tab)D, 3S; Pins, No. of:3; Pitch, lead:2.54mm; Power dissipation:125W; Power, Pd:125W; Power, Ptot:125W; Resistance, Rds on @ Vgs = 10V:0.18ohm; Temperature, current:25°C; Temperature, full power rating:25°C; Time, trr typ:240ns; Transistor polarity:N; Transistors, No. of:1; Voltage, Vds max:200V; Voltage, Vgs th max:4V; Voltage, Vgs th min:2V
Nomes alternativos do fabricante
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- ST MICRO
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- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Especificações técnicas
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)18 A
Current Rating18 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance180 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.56 nF
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage200 V
Min Operating Temperature-65 °C
Number of Elements1
Power Dissipation125 W
Rds On Max180 mΩ
Rise Time27 ns
Voltage Rating (DC)200 V
Fichas técnicas e documentos
Baixe as fichas de dados e a documentação do fabricante para STMicroelectronics IRF640..