onsemi RHRD660S9A

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 6A, 600V V(RRM), Silicon, TO-252AA
EOL

Preço e estoque

Fichas técnicas e documentos

Baixe as fichas de dados e a documentação do fabricante para onsemi RHRD660S9A.

onsemi

Datasheet5 páginas24 anos atrás
Datasheet0 páginashá 0 anos
Datasheet0 páginashá 0 anos

IHS

Future Electronics

Fairchild Semiconductor

Farnell

Histórico de estoque

Tendência de 3 meses:
-100%

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Peças alternativas

Esta peça
Peças alternativas
Price @ 1000
$ 0.481
Stock
416,019
211,997
Authorized Distributors
0
4
Mount
Surface Mount
Surface Mount
Case/Package
TO-252
TO-252
Forward Voltage
2.1 V
1.2 V
Reverse Voltage (DC)
-
-
Average Rectified Current
6 A
6 A
Max Reverse Leakage Current
-
-
Reverse Recovery Time
35 ns
60 ns

Cadeia de suprimentos

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.10.00.80
Introduction Date2001-03-12
Lifecycle StatusEOL (Last Updated: 5 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 5 days ago)

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Descrições

Descrições de onsemi RHRD660S9A fornecidas pelos seus distribuidores.

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 6A, 600V V(RRM), Silicon, TO-252AA
Diode Switching 600V 6A 3-Pin (2+Tab) TO-252 T/R
RHRD660S Series 6 A 600 V Surface Mount Hyperfast Diodes - TO-252-3
Diodes - General Purpose, Power, Switching 6A 600V HyperFast Diode
6A 100Ã×A@600V 600V 2.1V@6A TO-252 Diodes - General Purpose ROHS
DIODE GEN PURP 600V 6A TO252-3
DIODE FAST REC 600V 6A TO252-3
DIODE, RECTIFIER, 6A, 600V, TO-252; Diode Type:Ultrafast Recovery; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:600V; Forward Current If(AV):6A; Forward Voltage VF Max:2.1V; Reverse Recovery Time trr Max:35ns; Forward Surge Current Ifsm Max:60A; Operating Temperature Range:-65°C to +175°C; Diode Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2011)
The RHRD660S is a hyperfast diodes with soft recovery characteristics. It has the half recovery time of Ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended to be used as freewheeling/ clamping diodes and diodes in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.

Nomes alternativos do fabricante

onsemi possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. onsemi também pode ser conhecido(a) pelos seguintes nomes:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd

Números alternativos de peça

Esta peça pode ser conhecida por estes números alternativos de peça:

  • RHRD 660S9A
  • RHRD660S9A.