onsemi NXH80T120L3Q0S3G

Power Integrated Module (PIM), T-Type NPC 1200 V, 80 A IGBT, 600 V, 50 A IGBT Solder pins
$ 55.3
Production
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DistributorSKUMinPkg
Future Electronics
2
NXH80T120L3Q0S3G2424Tray
NewarkNXH80T120L3Q0S3G11
Verical
2
NXH80T120L3Q0S3G13625
Arrow ElectronicsNXH80T120L3Q0S3G2424
Rochester ElectronicsNXH80T120L3Q0S3G136
10h

Fichas técnicas e documentos

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IHS

Datasheet20 páginas6 anos atrás

Master Electronics

Future Electronics

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Tendência de 3 meses:
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Cadeia de suprimentos

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2018-09-28
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

Descrições

Descrições de onsemi NXH80T120L3Q0S3G fornecidas pelos seus distribuidores.

Power Integrated Module (PIM), T-Type NPC 1200 V, 80 A IGBT, 600 V, 50 A IGBT Solder pins
onsemi
Trans IGBT Module N-CH 1200V 75A/50A/50A/75A 188W 20-Pin Q0PACK Tray
Richardson RFPD
Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel
IHS
IGBT Modules PIM gen3 1200V 80A
Future Electronics
IGBT MOD 1200V 75A 188W 20-PIM
DigiKey
PIM GENERATION3 Q0PACK 1200V, 80
Easev
IGBT MODULE, 1.2KV, 75A; Continuous Collector Current:75A; Collector Emitter Saturation Voltage:1.7V; Power Dissipation:188W; Operating Temperature Max:175°C; IGBT Termination:Solder Pin; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes
Newark

Imagens

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RS

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