onsemi NDS9947
$ 0.765
Obsolete
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Cadeia de suprimentos
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1994-01-01
Lifecycle StatusObsolete (Last Updated: 1 month ago)
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Descrições
Descrições de onsemi NDS9947 fornecidas pelos seus distribuidores.
3V@ 250µA 13nC@ 10V 2individualPChannel 20V 100mΩ@ 3.5A,10V 542pF@10V SOIC-8 SMD mount
Trans MOSFET P-CH 20V 3.5A 8-Pin SOIC N T/R
MOSFETs Dual 20V P-Ch MOSFET Power Trench
Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
20V DUAL P-CH. FET, 100 MO, SO
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-3.5A; On Resistance, Rds(on):100ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (–4.5V to – 20V).
Nomes alternativos do fabricante
onsemi possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. onsemi também pode ser conhecido(a) pelos seguintes nomes:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
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Modelos CAD
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Especificações técnicas
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight187 mg
Technical
Continuous Drain Current (ID)3.5 A
Current Rating-3.5 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance100 mΩ
Drain to Source Voltage (Vds)-20 V
Element ConfigurationDual
Fall Time9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance542 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature175 °C
Max Power Dissipation2 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
PackagingCut Tape
Power Dissipation2 W
Rds On Max100 mΩ
Rise Time13 ns
Turn-Off Delay Time26 ns
Turn-On Delay Time9 ns
Voltage Rating (DC)-20 V
Dimensions
Height1.75 mm