onsemi KSD1616AYTA

TRANS NPN 60V 1A TO92-3 / Bipolar (BJT) Transistor NPN 60 V 1 A 160MHz 750 mW Through Hole TO-92-3
$ 0.104
EOL
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Verical
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KSD1616AYTA3934
Arrow ElectronicsKSD1616AYTA391
Master ElectronicsKSD1616AYTA10.0002K
Onlinecomponents.comKSD1616AYTA10.0002KBulk
DigiKey
2
KSD1616AYTACT-ND10.0611Cut Tape

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Baixe as fichas de dados e a documentação do fabricante para onsemi KSD1616AYTA.

IHS

Datasheet7 páginas4 anos atrás
Datasheet0 páginashá 0 anos

Master Electronics

onsemi

Fairchild Semiconductor

TME

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Cadeia de suprimentos

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date2000-12-04
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2026-01-06
LTD Date2026-07-06
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)

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Descrições

Descrições de onsemi KSD1616AYTA fornecidas pelos seus distribuidores.

TRANS NPN 60V 1A TO92-3 / Bipolar (BJT) Transistor NPN 60 V 1 A 160MHz 750 mW Through Hole TO-92-3
Win Source
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Semicontronic
Bipolar Transistors - BJT NPN Epitaxial Transistor
Fly-Wing Technology
Trans GP BJT NPN 60V 1A 750mW 3-Pin TO-92 Fan-Fold
Verical
60V 750mW 1A 135@100mA2V 160MHz 150mV@1A50mA NPN +150¡Í@(Tj) TO-92-3L Bipolar Transistors - BJT ROHS
Dasenic
Transistor, Npn, 60V, 1A, To-92-3; Transistor Polarity:Npn; Collector Emitter Voltage V(Br)Ceo:60V; Transition Frequency Ft:160Mhz; Power Dissipation Pd:750Mw; Dc Collector Current:1A; Dc Current Gain Hfe:135Hfe; Transistor Case Rohs Compliant: Yes |Onsemi KSD1616AYTA
Newark

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Newark
TME
RS APAC
Future Electronics
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Rochester Electronics

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