onsemi ISL9R30120G2
Obsolete
Preço e estoque
Distribuidores autorizados
Distribuidores de estoque não autorizados
Revendedores não autorizados
Histórico de estoque
Tendência de 3 meses: +0.00%
Modelos CAD
Baixe o símbolo, a pegada e o 3D STEP
Peças alternativas
0 peça disponível
Cadeia de suprimentos
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.10.00.80
Introduction Date2002-06-04
Lifecycle StatusObsolete (Last Updated: 5 days ago)
LTB Date2021-07-29
LTD Date2022-01-29
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 days ago)
Peças relacionadas
MicrochipAPT30D120BG
Rectifier Diodes & Bridges; APT30D120BG; MICROCHIP TECHNOLOGY; 250 A; 210 A; 2.5 V; 30 A
Descrições
Descrições de onsemi ISL9R30120G2 fornecidas pelos seus distribuidores.
Rectifier Diode, 1 Phase, 1 Element, 30A, 1200V V(RRM), Silicon, TO-247
Rectifier Diode Switching 1.2KV 30A 100ns 2-Pin(2+Tab) TO-247 Tube
ISL9R30120 Series 1200 V 30 A 166 W Stealth Diode - TO-247
BRIDGE RECTIFIER, 30A, 1200V, TO247; Diode Type:Fast Recovery; Repetitive Reverse Voltage Vrrm Max:1.2kV; Forward Current If(AV):30A; Forward Voltage VF Max:3.3V; Reverse Recovery Time trr Max:100ns; Forward Surge Current Ifsm Max:325A; Operating Temperature Range:-55°C to +150°C; Diode Case Style:TO-247; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); No. of Phases:Single; Package / Case:TO-247; Termination Type:Through Hole
The ISL9R30120G2 is a STEALTH™ diode optimized for low loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse recovery current (IRR) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRR and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the STEALTH™ diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost.
Nomes alternativos do fabricante
onsemi possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. onsemi também pode ser conhecido(a) pelos seguintes nomes:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Histórico de estoque
Tendência de 3 meses: +0.00%
Modelos CAD
Baixe o símbolo, a pegada e o 3D STEP
Peças alternativas
0 peça disponível
Especificações técnicas
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins2
Number of Terminals2
Weight6.33 g
Technical
Average Rectified Current30 A
Capacitance115 pF
Current Rating30 A
Element ConfigurationSingle
Forward Current30 A
Forward Voltage3.1 V
Max Forward Surge Current (Ifsm)325 A
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Output Current30 A
Max Repetitive Reverse Voltage (Vrrm)1.2 kV
Max Reverse Voltage (DC)1.2 kV
Max Surge Current325 A
Min Operating Temperature-55 °C
Number of Elements1
Output Current30 A
Peak Non-Repetitive Surge Current325 A
Peak Reverse Current100 µA
PolarityStandard
Power Dissipation166 W
Recovery Time100 ns
Reverse Recovery Time100 ns
Reverse Standoff Voltage1.2 kV
Reverse Voltage1.2 kV
Voltage Rating (DC)1.2 kV
Dimensions
Height24.75 mm
Length15.87 mm
Width4.82 mm
Conformidade
Classificação ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declarações de conformidade