onsemi HUF75332P3
$ 1.089
EOL
Preço e estoque
Distribuidores autorizados
Distribuidores de estoque não autorizados
Revendedores não autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | HUF75332P3 | 9.713 | 22h | |||||||||
| Verical | HUF75332P3 | 787 | 286 | |||||||||
| DigiKey | HUF75332P3FS-ND | 354 | 1 | Tube | ||||||||
| Newark | HUF75332P3 | 0 | 800 | |||||||||
| Avnet | HUF75332P3 | 0 | 1600 | 1d |
Histórico de estoque
Tendência de 3 meses: +0.00%
Modelos CAD
Baixe o símbolo, a pegada e o 3D STEP
Peças alternativas
1 peça disponível
Fichas técnicas e documentos
Baixe as fichas de dados e a documentação do fabricante para onsemi HUF75332P3.
Peças alternativas
Esta peça
Peças alternativas
Price @ 1000
$ 1.089
$ 0.68
Stock
236,703
30,002
Authorized Distributors
6
1
Mount
Through Hole
-
Case/Package
TO-220AB
-
Drain to Source Voltage (Vdss)
55 V
-
Continuous Drain Current (ID)
60 A
60 A
Threshold Voltage
-
-
Rds On Max
19 mΩ
-
Gate to Source Voltage (Vgs)
20 V
-
Power Dissipation
145 W
-
Input Capacitance
1.3 nF
-
Cadeia de suprimentos
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-06-01
Lifecycle StatusEOL (Last Updated: 5 days ago)
LTB Date2025-10-08
LTD Date2026-04-08
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 5 days ago)
Peças relacionadas
InfineonIRFZ48NPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 14 Milliohms;ID 64A;TO-220AB;PD 130W;gFS 24S
InfineonIRFZ44NPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 17.5 Milliohms;ID 49A;TO-220AB;PD 94W;-55deg
InfineonIRFZ46NPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 16.5 Milliohms;ID 53A;TO-220AB;PD 107W;-55de
Descrições
Descrições de onsemi HUF75332P3 fornecidas pelos seus distribuidores.
N-Channel UltraFET Power MOSFET 55V, 60A, 19mΩ
52 A 55 V 0.019 ohm N-CHANNEL Si POWER MOSFET TO-220AB
55 V, 60 A, 0.019 OHM, N-CHANNEL ULTRAFET POWER MOSFET Power Field-Effect Transistor, 60A I(D), 55V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:60A; On Resistance, Rds(on):0.016ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220 ;RoHS Compliant: Yes
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75332.
Nomes alternativos do fabricante
onsemi possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. onsemi também pode ser conhecido(a) pelos seguintes nomes:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Histórico de estoque
Tendência de 3 meses: +0.00%
Modelos CAD
Baixe o símbolo, a pegada e o 3D STEP
Peças alternativas
1 peça disponível
Especificações técnicas
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)60 A
Current Rating60 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance19 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time45 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.3 nF
Max Operating Temperature175 °C
Max Power Dissipation145 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation145 W
Rds On Max19 mΩ
Rise Time90 ns
Turn-Off Delay Time50 ns
Turn-On Delay Time9 ns
Voltage Rating (DC)55 V
Fichas técnicas e documentos
Baixe as fichas de dados e a documentação do fabricante para onsemi HUF75332P3.
Conformidade
Classificação ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declarações de conformidade