onsemi FQP70N10
Obsolete
Preço e estoque
Distribuidores autorizados
Distribuidores de estoque não autorizados
Revendedores não autorizados
Modelos CAD
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Cadeia de suprimentos
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-10-19
Lifecycle StatusObsolete (Last Updated: 4 days ago)
LTB Date2022-06-23
LTD Date2022-12-23
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 4 days ago)
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MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 14Milliohms;ID 59A;TO-220AB;PD 160W;-55deg
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Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package
Descrições
Descrições de onsemi FQP70N10 fornecidas pelos seus distribuidores.
Power MOSFET, N-Channel, QFET®, 100 V, 57 A, 23 mΩ, TO-220
Trans MOSFET N-CH 100V 57A 3-Pin(3+Tab) TO-220AB Rail
N-Channel 100 V 23 mOhm Through Hole Mosfet - TO-220
Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:57A; Drain Source Voltage Vds:100V; On Resistance Rds(on):23mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:160W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Current Id Max:57A; On State Resistance Max:23mohm; Package / Case:TO-220; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulse Current Idm:228A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Nomes alternativos do fabricante
onsemi possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. onsemi também pode ser conhecido(a) pelos seguintes nomes:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Especificações técnicas
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)57 A
Current Rating57 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance23 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time160 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance3.3 nF
Max Operating Temperature175 °C
Max Power Dissipation160 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation160 W
Rds On Max23 mΩ
Resistance23 MΩ
Rise Time470 ns
Threshold Voltage4 V
Turn-Off Delay Time130 ns
Turn-On Delay Time30 ns
Voltage Rating (DC)100 V
Dimensions
Height9.4 mm
Length10.1 mm
Width4.7 mm
Conformidade
Classificação ambiental
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Declarações de conformidade