onsemi FQP5N80

Mosfet N-ch 800V 4.8A TO-220
$ 1.05
Obsolete
Ficha de dados

Preço e estoque

Fichas técnicas e documentos

Baixe as fichas de dados e a documentação do fabricante para onsemi FQP5N80.

IHS

Datasheet8 páginas25 anos atrás

Farnell

iiiC

Histórico de estoque

Tendência de 3 meses:
Restocked

Cadeia de suprimentos

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-11-10
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-09-14
LTD Date2012-03-14

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Descrições

Descrições de onsemi FQP5N80 fornecidas pelos seus distribuidores.

MOSFET N-CH 800V 4.8A TO-220
Power Field-Effect Transistor, 4.8A I(D), 800V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFETs 800V N-Channel QFET
N-CHANNEL POWER MOSFET
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:4.8A; Drain Source Voltage Vds:800V; On Resistance Rds(on):2.6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:140W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Current Id Max:4.8A; On State Resistance Max:2.6ohm; Package / Case:TO-220; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Pulse Current Idm:19.2A; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V

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