onsemi FQP13N50

N-Channel Power MOSFET, QFET®, 500 V, 12.5 A, 430 mΩ, TO-220
$ 1.17
EOL
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DistributorSKUMinPkg
Rochester ElectronicsFQP13N5038
3h
Farnell
2
FQP13N5001
1d
element14 APACFQP13N5001
17h
Win SourceWS-FQP13N505.18724
4h
Worldway ElectronicsFQP13N5025.5787Tube
3h

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IHS

Datasheet8 páginas12 anos atrás

element14 APAC

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Cadeia de suprimentos

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-06-23
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2022-06-21
LTD Date2022-12-21
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)

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Descrições

Descrições de onsemi FQP13N50 fornecidas pelos seus distribuidores.

N-Channel Power MOSFET, QFET®, 500 V, 12.5 A, 430 mΩ, TO-220
onsemi
Trans MOSFET N-CH 500V 12.5A 3-Pin(3+Tab) TO-220AB Rail
Avnet
N-Channel 500 V 0.43 O Flange Muont Mosfet - TO-220
Future Electronics
Power Field-Effect Transistor, 12.5A I(D), 500V, 0.43ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IHS
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:12.5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):430mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:170W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Current Id Max:12.5A; On State Resistance Max:430mohm; Package / Case:TO-220; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:50A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
element14 APAC
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.

Imagens

element14 APAC
TME
Farnell
iiiC
Future Electronics
Conrad
Rochester Electronics

Nomes alternativos do fabricante

onsemi possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. onsemi também pode ser conhecido(a) pelos seguintes nomes:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd

Números alternativos de peça

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  • FQP13N50.