onsemi FQD12N20TM
$ 0.392
EOL
Preço e estoque
Distribuidores autorizados
Distribuidores de estoque não autorizados
Revendedores não autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | FQD12N20TM | 370 | 1h | |||||||||
| RS (Formerly Allied Electronics) | FQD12N20TM | 0 | 10 | Bulk | 17h | |||||||
| Weyland Electronics Group Pte. Ltd. | FQD12N20TM | 5.000 | 1 | Tape & Reel | 4h | |||||||
| Win Source | WS-FQD12N20TM | 5.000 | 40 | 2h | ||||||||
| Worldway Electronics | FQD12N20TM | 17.324 | 7 | Tape & Reel | 38m |
Histórico de estoque
Tendência de 3 meses: +0.00%
Modelos CAD
Baixe o símbolo, a pegada e o 3D STEP
Peças alternativas
1 peça disponível
Peças alternativas
Esta peça
Peças alternativas
Price @ 1000
$ 0.392
$ 0.559
Stock
196,830
58,881
Authorized Distributors
2
2
Mount
Surface Mount
Surface Mount
Case/Package
DPAK
TO-252-3
Drain to Source Voltage (Vdss)
200 V
200 V
Continuous Drain Current (ID)
9 A
9 A
Threshold Voltage
-
-
Rds On Max
280 mΩ
280 mΩ
Gate to Source Voltage (Vgs)
30 V
30 V
Power Dissipation
2.5 W
2.5 W
Input Capacitance
910 pF
910 pF
Cadeia de suprimentos
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-01-01
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
Descrições
Descrições de onsemi FQD12N20TM fornecidas pelos seus distribuidores.
N-Channel Power MOSFET, QFET®, 200 V, 9.0 A, 280 mΩ, DPAK
TRANSISTOR, N-CHANNEL, QFET MOSFET, 200V, 9A, 280 MOHM AT VGS 10V, DPAK
N-Channel 200 V 0.28 Ohm Surface Mount QFET Mosfet - DPAK
Power Field-Effect Transistor, 9A I(D), 200V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, N-CH, 200V, 9A, TO-252-3; Transi; MOSFET, N-CH, 200V, 9A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.21ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; No. of Pins:3Pins
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts..
Nomes alternativos do fabricante
onsemi possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. onsemi também pode ser conhecido(a) pelos seguintes nomes:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Histórico de estoque
Tendência de 3 meses: +0.00%
Modelos CAD
Baixe o símbolo, a pegada e o 3D STEP
Peças alternativas
1 peça disponível
Especificações técnicas
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)9 A
Current Rating9 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance280 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time55 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance910 pF
Max Operating Temperature150 °C
Max Power Dissipation55 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.5 W
Rds On Max280 mΩ
Rise Time120 ns
Schedule B8541290080
Turn-Off Delay Time30 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)200 V
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm
Conformidade
Classificação ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declarações de conformidade