onsemi FQAF16N50
$ 2.329
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Mín.
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Cadeia de suprimentos
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-12-16
Lifecycle StatusEOL (Last Updated: 1 day ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 day ago)
Descrições
Descrições de onsemi FQAF16N50 fornecidas pelos seus distribuidores.
N-Channel Power MOSFET, QFET®, 500 V, 11.3 A, 320 mΩ, TO-3PF
TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,11.3A I(D),TO-247VAR
Trans MOSFET N-CH 500V 11.3A 3-Pin(3+Tab) TO-3PF Rail
Power Field-Effect Transistor, 11.3A I(D), 500V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
POWER FIELD-EFFECT TRANSISTOR, 1
POWER MOSFET, N-CHANNEL, QFET®;
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Nomes alternativos do fabricante
onsemi possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. onsemi também pode ser conhecido(a) pelos seguintes nomes:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
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Modelos CAD
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Especificações técnicas
Physical
Case/PackageSC
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.962 g
Technical
Continuous Drain Current (ID)11.3 A
Current Rating11.3 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance320 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time100 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance3 nF
Max Operating Temperature150 °C
Max Power Dissipation110 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation110 W
Rds On Max320 mΩ
Rise Time180 ns
Turn-Off Delay Time130 ns
Turn-On Delay Time45 ns
Voltage Rating (DC)500 V
Dimensions
Height16.7 mm
Length15.7 mm
Width5.7 mm
Conformidade
Classificação ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declarações de conformidade