onsemi FQA19N60
Obsolete
Preço e estoque
Distribuidores autorizados
Distribuidores de estoque não autorizados
Revendedores não autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Microchip USA | FQA19N60 | 401 | 150 | Bulk | 23h | |||||||
| Win Source | WS-FQA19N60 | 5.917 | 5 | 2h | ||||||||
| Worldway Electronics | FQA19N60 | 6.545 | 7 | Tube | 36m | |||||||
| Esaler Electronic | FQA19N60 | 450 | 1d | |||||||||
| Aztech | FQA19N60 | 395 | 20h |
Fichas técnicas e documentos
Baixe as fichas de dados e a documentação do fabricante para onsemi FQA19N60.
Cadeia de suprimentos
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-06-26
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2022-06-23
LTD Date2022-12-23
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
Descrições
Descrições de onsemi FQA19N60 fornecidas pelos seus distribuidores.
N-Channel Power MOSFET, QFET®, 600 V, 18.5 A, 380 mΩ, TO-3P
Transistor FQA19N60 N-Channel QFET MOSFET 600V 18.5A TO-3PN
N Channel 600 V 380 mO 300 W QFET Mosfet Flange Mount - TO-3PN
Trans MOSFET N-CH 600V 18.5A 3-Pin(3+Tab) TO-3P(N) Rail
MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:18.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):380mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-3P; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:18.5A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:TO-3P; Power Dissipation Pd:300W; Power Dissipation Pd:300W; Pulse Current Idm:74A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Nomes alternativos do fabricante
onsemi possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. onsemi também pode ser conhecido(a) pelos seguintes nomes:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Especificações técnicas
Physical
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)18.5 A
Current16 A
Current Rating18.5 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance380 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time135 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance3.6 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation300 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation300 W
Rds On Max380 mΩ
Rise Time210 ns
Schedule B8541290080
Threshold Voltage5 V
Turn-Off Delay Time150 ns
Turn-On Delay Time65 ns
Voltage600 V
Voltage Rating (DC)600 V
Dimensions
Height23.8 mm
Length15.8 mm
Width5 mm
Fichas técnicas e documentos
Baixe as fichas de dados e a documentação do fabricante para onsemi FQA19N60.
Conformidade
Classificação ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declarações de conformidade