onsemi FQA10N80C

Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Obsolete
Ficha de dados

Preço e estoque

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DistributorSKUMinPkg
Win SourceWS-FQA10N80C2.10026
18h
Worldway ElectronicsFQA10N80C25.1277Tube
17h
Chipsmall LimitedFQA10N80C50.0001
16h
SHENGYU ELECTRONICSFQA10N80C19.6691
4d
AnlinkdaFQA10N80C14.735
2d

Fichas técnicas e documentos

Baixe as fichas de dados e a documentação do fabricante para onsemi FQA10N80C.

IHS

Datasheet9 páginas19 anos atrás

Farnell

Cadeia de suprimentos

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-04-03
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2007-06-20
LTD Date2007-12-20

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Descrições

Descrições de onsemi FQA10N80C fornecidas pelos seus distribuidores.

Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IHS
800V N-CHANNEL ADVANCE Q-FET C-SERIES
Avnet
MOSFETs 800V N-Ch advance QFET
Mouser
MOSFET, N, TO-3P; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:800V; Current, Id Cont:10A; Resistance, Rds On:0.93ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-3P; Current, Idm Pulse:40A; No. of Pins:3; Power Dissipation:240W; Power, Pd:240W; Power, Ptot:240W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:800V
Farnell

Imagens

Farnell
Rochester Electronics

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