onsemi FJP2145TU

Trans GP BJT NPN 800V 5A 120000mW 3-Pin(3+Tab) TO-220 Tube

Power Bipolar Transistor, 5A I(C), 1-Element, NPN

ESBC Rated NPN Power Transistor

The FJP2145 is a low-cost, high-performance power switch designed to provide the best performance when used in an ESBC™ configuration in applications such as: power supplies, motor drivers, smart grid, or ignition switches. The power switch is designed to operate up to 1100 volts and up to 5 amps, while providing exceptionally low on-resistance and very low switching losses. The ESBC™ switch can be driven using off-the-shelf power supply controllers or drivers. The ESBC™ MOSFET is a low-voltage, low-cost, surface-mount device that combines low-input capacitance and fast switching. The ESBC™ configuration further minimizes the required driving power because it does not have Miller capacitance. The FJP2145 provides exceptional reliability and a large operating range due to its square reverse-bias-safe-operating-area (RBSOA) and rugged design. The device is avalanche rated and has no parasitic transistors, so is not prone to static dv/dt failures. The power switch is manufactured using a dedicated high-voltage bipolar process and is packaged in a highvoltage TO-220 package.