onsemi FGA50N100BNTD2
Obsolete
Preço e estoque
Distribuidores autorizados
Distribuidores de estoque não autorizados
Revendedores não autorizados
Cadeia de suprimentos
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2009-03-12
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2021-07-29
LTD Date2022-01-29
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
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Descrições
Descrições de onsemi FGA50N100BNTD2 fornecidas pelos seus distribuidores.
Trans IGBT Chip N-CH 1KV 50A 3-Pin(3+Tab) TO-3P(N) Rail
Insulated Gate Bipolar Transistor, 50A I(C), 1000V V(BR)CES, N-Channel
IGBT, SINGLE, 1KV, 50A, TO-3P; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 156W; Collector Emitter Voltage V(br)ceo: 1kV; Transistor Case Style: TO-3P; No. of Pins: 3Pin
Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder applications.
Nomes alternativos do fabricante
onsemi possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. onsemi também pode ser conhecido(a) pelos seguintes nomes:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Especificações técnicas
Physical
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.401 g
Technical
Collector Emitter Breakdown Voltage1 kV
Collector Emitter Saturation Voltage1.5 V
Collector Emitter Voltage (VCEO)1 kV
Element ConfigurationSingle
Fall Time100 ns
Max Collector Current50 A
Max Operating Temperature150 °C
Max Power Dissipation156 W
Min Operating Temperature-55 °C
Number of Elements1
Reverse Recovery Time75 ns
Dimensions
Height20.1 mm
Length15.8 mm
Width5 mm
Conformidade
Classificação ambiental
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declarações de conformidade