onsemi FGA30N60LSDTU

600 V, 30 A PT IGBT Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel
$ 2.396
Obsolete
Página do fabricanteFicha de dados

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DistributorSKUMinPkg
AvnetFGA30N60LSDTU8681191
12h
Rochester ElectronicsFGA30N60LSDTU551
10h
Verical
2
FGA30N60LSDTU350127
Flip ElectronicsFGA30N60LSDTU868
>1wk
Component Stockers USAFGA30N60LSDTU1.244
>1wk

Fichas técnicas e documentos

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IHS

Datasheet10 páginas4 anos atrás
Datasheet9 páginas12 anos atrás

Factory Futures

Fairchild Semiconductor

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Cadeia de suprimentos

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2008-11-18
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2021-07-29
LTD Date2022-01-29

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Descrições

Descrições de onsemi FGA30N60LSDTU fornecidas pelos seus distribuidores.

600 V, 30 A PT IGBT Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel
ComSIT Distribution GmbH
Trans IGBT Chip N-CH 600V 60A 480000mW 3-Pin(3+Tab) TO-3PN Rail
Verical
RAIL/N-CH / 30A 600V Planar IGBT
Newark
480W 1.3V 600V 60A TO-3P 15.8mm*5mm*18.9mm
Unikeyic (ICkey)
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Farnell
INSULATED GATE BIPOLAR TRANSISTO
Bettlink
Using Fairchild's advanced PT technology, the FGA30N60LSD IGBT offers superior conduction performances, which offer the optimum performance for medium switching application such as solar inverter, UPS applications where low conduction losses are the most important factor.
Fairchild Semiconductor

Imagens

Augswan
Rochester Electronics
LZChips

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