onsemi FDS8670

Trans Mosfet N-ch 30V 21A 8-PIN SOIC T/r
$ 0.851
Obsolete

Preço e estoque

Fichas técnicas e documentos

Baixe as fichas de dados e a documentação do fabricante para onsemi FDS8670.

IHS

Datasheet5 páginas20 anos atrás
Datasheet0 páginashá 0 anos

Farnell

Fairchild Semiconductor

Histórico de estoque

Tendência de 3 meses:
+0.00%

Cadeia de suprimentos

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2005-10-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-06-01
LTD Date2011-12-01

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Descrições

Descrições de onsemi FDS8670 fornecidas pelos seus distribuidores.

Trans MOSFET N-CH 30V 21A 8-Pin SOIC T/R
MOSFETs 30V N-CHANNEL POWERTRENCH MOSFET
Power Field-Effect Transistor, 21A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.4V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:21A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:105A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
This device has been designed specifically to improvethe efficiency of DC-DC converters. Using newtechniques in MOSFET construction, the variouscomponents of gate charge and capacitance have beenoptimized to reduce switching losses. Low gateresistance and very low Miller charge enable excellentperformance with both adaptive and fixed dead timegate drive circuits. Very low Rds(on) has beenmaintained to provide an extremely versatile device.

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