onsemi FDN5630
$ 0.196
Production
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Histórico de estoque
Tendência de 3 meses: +6.18%
Modelos CAD
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Modelos CAD
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|---|---|---|---|
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Cadeia de suprimentos
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-08-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
LTB Date2021-12-24
LTD Date2021-12-24
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Descrições
Descrições de onsemi FDN5630 fornecidas pelos seus distribuidores.
N-Channel 60 V 0.5 W 100 mOhm 10 nC SMT PowerTrench Mosfet - SSOT-3
N-Channel PowerTrench® MOSFET 60V, 1.7A, 100mΩ
Power MOSFET, N Channel, 60 V, 1.7 A, 0.1 ohm, SuperSOT, Surface Mount
MOSFET, N, SMD, SSOT-3; Transistor Polarity:N Channel; Continuous Drain Current Id:1.7A; Drain Source Voltage Vds:60V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.4V; Power Dissipation Pd:500mW; Transistor Case Style:SuperSOT; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:1.7A; Package / Case:SuperSOT-3; Power Dissipation Pd:500mW; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:2.4V; Voltage Vgs Rds on Measurement:10V
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features very low RDS(ON) in a small SOT23 footprint. Fairchild’s PowerTrench technology provides faster switching than other MOSFETs with comparable RDS(ON) specifications. The result is higher overall efficiency with less board space.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.7 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 83 / Gate-Source Voltage V = 20 / Fall Time ns = 5 / Rise Time ns = 6 / Turn-OFF Delay Time ns = 15 / Turn-ON Delay Time ns = 10 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500
Nomes alternativos do fabricante
onsemi possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. onsemi também pode ser conhecido(a) pelos seguintes nomes:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Histórico de estoque
Tendência de 3 meses: +6.18%
Modelos CAD
Baixe o símbolo, a pegada e o 3D STEP
Peças alternativas
0 peça disponível
Especificações técnicas
Physical
Case/PackageTO-236-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)1.7 A
Current17 A
Current Rating1.7 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance100 mΩ
Drain to Source Voltage (Vdss)60 V
Dual Supply Voltage60 V
Element ConfigurationSingle
Fall Time6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance400 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs2.4 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation460 mW
Rds On Max100 mΩ
Resistance100 mΩ
Rise Time6 ns
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage1 V
Turn-Off Delay Time15 ns
Turn-On Delay Time10 ns
Voltage60 V
Voltage Rating (DC)60 V
Dimensions
Height1.22 mm
Length2.92 mm
Width1.4 mm
Conformidade
Classificação ambiental
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declarações de conformidade