onsemi FDMS8888

N-Channel PowerTrench® MOSFET 30V, 21A, 9.5m
$ 0.289
Obsolete

Preço e estoque

Fichas técnicas e documentos

Baixe as fichas de dados e a documentação do fabricante para onsemi FDMS8888.

IHS

Datasheet0 páginashá 0 anos
Datasheet0 páginashá 0 anos

onsemi

element14 APAC

Fairchild Semiconductor

Farnell

Histórico de estoque

Tendência de 3 meses:
+0.00%

Cadeia de suprimentos

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2011-07-18
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2021-10-08
LTD Date2022-04-08
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)

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Descrições

Descrições de onsemi FDMS8888 fornecidas pelos seus distribuidores.

N-Channel PowerTrench® MOSFET 30V, 21A, 9.5m
30V 51A 80m´Î@10V13.5A 42W 1.9V@250uA 161pF@15V N Channel 1.195nF@15V 13nC@0~5V -55¡Í~+150¡Í@(Tj) Power-56-8 MOSFETs ROHS
MOSFET, N CH, 30V, 21A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.008ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:42W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
The FDMS8888 has been designed to minimixe losses in power conversion application. The Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.

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