onsemi FDMS8690

Power Field-Effect Transistor, 27A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
$ 0.999
Obsolete
Página do fabricanteFicha de dados

Preço e estoque

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DistributorSKUMinPkg
Rochester ElectronicsFDMS8690429.820
12h
Verical
3
FDMS8690437281
Component Stockers USAFDMS8690485.374
>1wk
Win SourceWS-FDMS869010.300165
13h
ICPartonlineFDMS869028.471
>1wk

Fichas técnicas e documentos

Baixe as fichas de dados e a documentação do fabricante para onsemi FDMS8690.

IHS

Datasheet7 páginas19 anos atrás
Datasheet0 páginashá 0 anos

Farnell

Fairchild Semiconductor

iiiC

DigiKey

Histórico de estoque

Tendência de 3 meses:
Restocked
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Cadeia de suprimentos

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2006-03-29
Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Descrições

Descrições de onsemi FDMS8690 fornecidas pelos seus distribuidores.

Power Field-Effect Transistor, 27A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IHS
MOSFET N-CH 30V 14A/27A 8MLP
Fmall Co., Limited
Field Effect Tube (MOSFET)
Weyland Electronics Group Pte. Ltd.
N-CHANNEL POWER MOSFET
Bettlink
MOSFETs LOW_VOLTAGE
Mouser
MOSFET, N, SMD, MLP; Transistor Type:PowerTrench; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:14A; Resistance, Rds On:0.009ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.6V; Case Style:Power 56; Termination Type:SMD; Current, Idm Pulse:100A; No. of Pins:8; Power Dissipation:2.5W; SMD Marking:FDMS8690; Voltage, Vds Max:30V; Voltage, Vgs th Max:3V
Farnell
This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low rDS(on) has been maintained to provide an extremely versatile device.
Fairchild Semiconductor

Imagens

Rochester Electronics
iiiC

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