onsemi FDMS8670S

N-Channel PowerTrench® SyncFET™ MOSFET 30V, 42A, 3.5mΩ
$ 0.847
Obsolete
Página do fabricanteFicha de dados

Preço e estoque

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DistributorSKUMinPkg
Rochester ElectronicsFDMS8670S553
1d
Flip ElectronicsFDMS8670S2.848
7d
AvnetFDMS8670S01064
5d
FarnellFDMS8670S01
8h
element14 APACFDMS8670S01
3h

Fichas técnicas e documentos

Baixe as fichas de dados e a documentação do fabricante para onsemi FDMS8670S.

IHS

Datasheet0 páginashá 0 anos
Datasheet0 páginashá 0 anos

Newark

onsemi

Fairchild Semiconductor

Farnell

Histórico de estoque

Tendência de 3 meses:
-10.64%
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Cadeia de suprimentos

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-10-30
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2021-02-12
LTD Date2021-08-12
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)

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Descrições

Descrições de onsemi FDMS8670S fornecidas pelos seus distribuidores.

N-Channel PowerTrench® SyncFET™ MOSFET 30V, 42A, 3.5mΩ
onsemi
N-Channel 30 V 3.5 mOhm Surface Mount PowerTrench Mosfet - Power 56
Future Electronics
2.5W(Ta),78W(Tc) 20V 3V@1mA 73nC@ 10 V 1N 30V 3.5m¦¸@ 20A,10V 20A,42A 4nF@15V QFN 6mm*5mm*1.1mm
UnikeyIC
MOSFET, N, SMD, MLP; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0035ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power Dissipat
element14 APAC
The FDMS8670S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
Fairchild Semiconductor
MOSFET, N, SMD, MLP; Transistor Type:PowerTrench; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:20A; Resistance, Rds On:0.0035ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.5V; Case Style:Power 56; Termination Type:SMD; Current, Idm Pulse:200A; No. of Pins:8; Power Dissipation:2.5W; SMD Marking:FDMS8670S; Voltage, Vds Max:30V; Voltage, Vgs th Max:3V
Farnell

Imagens

iiiC
Rochester Electronics

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  • onsemiconductor
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