onsemi FDMS8558SDC

FAIRCHILD SEMICONDUCTOR FDMS8558SDC MOSFET Transistor, N Channel, 90 A, 25 V, 0.0011 ohm, 10 V, 1.4 V
Obsolete
Ficha de dados
Página do fabricante

Preço e estoque

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Distribuidor
SKU
Mín.
Embalagem
Preço em massa
Win Source
WS-FDMS8558SDC
3.298
16
USD
3,233
2,802
2,802
10h
ICPartonline
FDMS8558SDC
39.577
USD
1,672
1,588
1,504
1,421
1,337
2d
Worldway Electronics
FDMS8558SDC
6.727
7
Tape & Reel
USD
1,321
1,296
1,246
1,221
10h
Aztech
FDMS8558SDC
638
USD
16,660
16,660
16,660
16,660
16,660
7h
SHENGYU ELECTRONICS
FDMS8558SDC
12.357
1
USD
1,838
1,801
1,750
1,690
1,620
2d

Fichas técnicas e documentos

Baixe as fichas de dados e a documentação do fabricante para onsemi FDMS8558SDC.

IHS

Datasheet9 páginas17 anos atrás
Datasheet0 páginashá 0 anos

onsemi

Fairchild Semiconductor

Farnell

element14 APAC

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Cadeia de suprimentos

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2012-06-07
Lifecycle StatusObsolete (Last Updated: 1 week ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 week ago)

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Descrições

Descrições de onsemi FDMS8558SDC fornecidas pelos seus distribuidores.

FAIRCHILD SEMICONDUCTOR FDMS8558SDC MOSFET Transistor, N Channel, 90 A, 25 V, 0.0011 ohm, 10 V, 1.4 V
AAA CHIPS
Power Field-Effect Transistor, 38A I(D), 25V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
IHS
MOSFET, N-CH, 25V, 8PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0011ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.4V; Power Dissipation Pd:89W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C
Farnell
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.
Fairchild Semiconductor

Imagens

element14 APAC
Farnell
Augswan
Rochester Electronics

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