onsemi FDMS0306AS

Trans MOSFET N-CH Si 30V 26A 8-Pin PQFN EP T/R
$ 0.609
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Master Electronics

Datasheet0 páginashá 0 anos

IHS

onsemi

Fairchild Semiconductor

Arrow.cn

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Tendência de 3 meses:
+93.87%

Cadeia de suprimentos

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2010-08-24
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descrições

Descrições de onsemi FDMS0306AS fornecidas pelos seus distribuidores.

Trans MOSFET N-CH Si 30V 26A 8-Pin PQFN EP T/R
2.5W(Ta),59W(Tc) 20V 3V@1mA 57nC@ 10 V 1N 30V 2.4m¦¸@ 26A,10V 26A,49A 3.55nF@15V QFN 6mm*5mm*1.1mm
N-Channel PowerTrench® SyncFET™ 30V, 49A, 2.4mΩ
MOSFET Gaming/DT/Notebook/NVDC/Server
Power Field-Effect Transistor, 26A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
TAPE REEL / SINGLE PT8 N 30/20 SYNCFET
The FDMS0306AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.

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