onsemi FDMA2002NZ
$ 0.36
Production
Preço e estoque
Distribuidores autorizados
Distribuidores de estoque não autorizados
Revendedores não autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | FDMA2002NZ | 9.000 | 3K | |||||||||
| Arrow Electronics | FDMA2002NZ | 894 | 1 | |||||||||
| Rochester Electronics | FDMA2002NZ | 144.428 | 18h | |||||||||
| DigiKey | FDMA2002NZCT-ND | 925 | 1 | Cut Tape | ||||||||
| Newark | FDMA2002NZ | 0 | 3K | Tape & Reel |
Histórico de estoque
Tendência de 3 meses: +4.86%
Modelos CAD
Baixe o símbolo, a pegada e o 3D STEP
Peças alternativas
0 peça disponível
Modelos CAD
Baixe o símbolo, a pegada e os modelos 3D STEP de onsemi FDMA2002NZ direto dos nossos confiáveis parceiros.
| FONTE | eCAD | mCAD | ARQUIVOS |
|---|---|---|---|
 Component Search Engine | SímboloPegada | 3D | Baixar |
 EE Concierge | SímboloPegada | ||
 SnapEDA | 3D | Baixar |
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Cadeia de suprimentos
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2006-06-09
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Descrições
Descrições de onsemi FDMA2002NZ fornecidas pelos seus distribuidores.
Dual N-Channel PowerTrench® MOSFET 30V, 2.9A, 123mΩ
DUAL N-CHANNEL POWERTRENCH MOSFET Small Signal Field-Effect Transistor, 2.9A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-229VCCC
Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:2.9A; On Resistance, Rds(on):0.123ohm; Rds(on) Test Voltage, Vgs:1V; Threshold Voltage, Vgs Typ:12V ;RoHS Compliant: Yes
This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
MOSFET, DUAL, N, MLP6; Transistor Type:MOSFET; Transistor Polarity:Dual N; Voltage, Vds Typ:30V; Current, Id Cont:2.9A; Resistance, Rds On:0.123ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:1V; Case Style:MLP-6; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C; Current, Idm Pulse:10A; No. of Pins:8; Power Dissipation:1.5W; Power, Pd:1.5W; SMD Marking:002; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Voltage, Vds Max:30V; Voltage, Vgs th N Channel 1 min:0.4V
Nomes alternativos do fabricante
onsemi possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. onsemi também pode ser conhecido(a) pelos seguintes nomes:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Histórico de estoque
Tendência de 3 meses: +4.86%
Modelos CAD
Baixe o símbolo, a pegada e o 3D STEP
Peças alternativas
0 peça disponível
Especificações técnicas
Physical
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight40 mg
Technical
Continuous Drain Current (ID)2.9 A
Current Rating2.9 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance123 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationDual
Fall Time8 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance220 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
PackagingCut Tape
Power Dissipation1.5 W
Rds On Max123 mΩ
Resistance123 MΩ
Rise Time8 ns
Schedule B8541290080
Threshold Voltage1 V
Turn-Off Delay Time12 ns
Turn-On Delay Time6 ns
Voltage Rating (DC)30 V
Dimensions
Height850 µm
Length2 mm
Width2 mm
Conformidade
Classificação ambiental
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declarações de conformidade