onsemi FDI038AN06A0

PowerTrench® MOSFET, N-Channel, 60V, 80A, 3.8mΩ
$ 2.441
Obsolete

Preço e estoque

Fichas técnicas e documentos

Baixe as fichas de dados e a documentação do fabricante para onsemi FDI038AN06A0.

IHS

Datasheet13 páginas4 anos atrás
Datasheet12 páginas12 anos atrás

Newark

onsemi

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Fairchild Semiconductor

Histórico de estoque

Tendência de 3 meses:
+0.00%

Cadeia de suprimentos

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2002-07-30
Lifecycle StatusObsolete (Last Updated: 5 days ago)
LTB Date2022-04-01
LTD Date2022-10-01
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 days ago)

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Descrições

Descrições de onsemi FDI038AN06A0 fornecidas pelos seus distribuidores.

PowerTrench® MOSFET, N-Channel, 60V, 80A, 3.8mΩ
Single N-Channel 60 V 0.0078 Ohm 124 nC 310 W Through Hole Mosfet TO-262
TO262, SINGLE, NCH, 60V, 0.0038 ohm PowerTrench MOSFET
Power Field-Effect Transistor, 17A I(D), 60V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AB
Mosfet, N-Ch, 60V, 80A, I2Pak; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:80A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; No. Of Pins:3Pinsrohs Compliant: Yes |Onsemi FDI038AN06A0

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