onsemi FDD5612

N-Channel PowerTrench® MOSFET, 60V, 18A, 55mΩ
Obsolete

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Technical Drawing1 páginas3 anos atrás
Datasheet8 páginas5 anos atrás

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element14 APAC

Future Electronics

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Cadeia de suprimentos

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-01-04
Lifecycle StatusObsolete (Last Updated: 1 week ago)
LTB Date2022-01-31
LTD Date2023-01-31
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 week ago)

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19 A 55 V 0.07 ohm N-CHANNEL Si POWER MOSFET TO-252AA

Descrições

Descrições de onsemi FDD5612 fornecidas pelos seus distribuidores.

N-Channel PowerTrench® MOSFET, 60V, 18A, 55mΩ
N-Channel 60 V 55 mOhm Surface Mount PowerTrench Mosfet - TO-252-3
Power Field-Effect Transistor, 18A I(D), 60V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
TRANSISTOR, MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:60V; On Resistance Rds(on):55mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.4V; Power Dissipation Pd:3.8W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:18A; Package / Case:TO-252; Power Dissipation Pd:3.8W; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:2.4V; Voltage Vgs Rds on Measurement:10V
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

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