onsemi FDB6030L

Trans MOSFET N-CH 30V 48A 3-Pin(2+Tab) D2PAK T/R
$ 0.58
Obsolete
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DistributorSKUMinPkg
Verical
5
FDB6030L1.460484
Rochester ElectronicsFDB6030L20.289
22h
Component Stockers USAFDB6030L22.992
12h
Win SourceWS-12888945.600180
23h
Worldway ElectronicsFDB6030L27.9197Bulk
22h

Fichas técnicas e documentos

Baixe as fichas de dados e a documentação do fabricante para onsemi FDB6030L.

IHS

Datasheet5 páginas22 anos atrás
Datasheet0 páginashá 0 anos

Fairchild Semiconductor

Future Electronics

Jameco

iiiC

Histórico de estoque

Tendência de 3 meses:
Restocked
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Cadeia de suprimentos

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1997-11-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Descrições

Descrições de onsemi FDB6030L fornecidas pelos seus distribuidores.

Trans MOSFET N-CH 30V 48A 3-Pin(2+Tab) D2PAK T/R
Verical
Power Field-Effect Transistor, 52A I(D), 30V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
IHS
TRANSISTOR, MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Voltage, Vds Typ:30V; Current, Id Cont:48A; On State Resistance:0.013ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.9V; Case Style:TO-220; Termination Type:SMD; Operating Temperature Range:-65°C to +175°C; Transistor Case Style:TO-220
Farnell
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Fairchild Semiconductor

Imagens

Newark
Rochester Electronics

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